Characterization of Cat-CVD grown Si–C and Si–C–O dielectric films for ULSI applications

Takatsuji, K.; Kawakami, Masaki; Makita, Yunosuke; Murakami, Kenji; Nakayama, Hiroshi; Miura, Yozo; Shimoyama, Norio; Machida, H.

doi:10.1016/s0040-6090(03)00087-7

Cited by 18 publications

(8 citation statements)

References 5 publications

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“…Nowadays, silicon rich oxide (SRO) also called nonstoichiometric silicon oxide is widely used in solar cells, IC modules, optical sensors, capacitors and other fields [1][2][3][4][5][6][7][8][9][10][11][12]. Especially, Al/SiO x used in metal insulator structure (MIS) has been employed as solar cells and devices in modules, etc.…”

Section: Introductionmentioning

confidence: 99%

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Microstructure and morphology of SiOx film deposited by APCVD

Zhang

Luo

et al. 2009

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

“…[13,14]. Lot of methods, such as PECVD, thermal oxidation, evaporation and so on [1][2][3][4][5][6][7][8][9][10][11][12][13][14], has been used to deposit SiO x film. But generally, the extra low pressure or high temperature is needed in these methods.…”

Section: Introductionmentioning

confidence: 99%

Microstructure and morphology of SiOx film deposited by APCVD

Zhang

Luo

et al. 2009

Journal of Alloys and Compounds

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“…It was reported that the Si composition of produced Si-C films was in the range of 40 -70% and its actual value was dependent on the experimental conditions (e.g., the material of catalyzer). 6,7) When the catalyzer effectively decomposes the dimethylsilane gas, small fragments such as Si-H n and H n -Si-C-H m (n; m ¼ 0; 1; 2; 3) may be produced and deposition of such fragments are more likely to result in the increase of Si content of the deposited Si-C film. On the other hand, large fragments such as H n -C-Si-C-H m may be produced when a less effective catalyzer is used.…”

Section: Introductionmentioning

confidence: 99%

Fragment Ions of Dimethylsilane Produced by Hot Tungsten Wires

Yoshimura

Toh

Sugimoto

et al. 2006

Jpn. J. Appl. Phys.

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Fragment ions produced from dimethylsilane with a hot tungsten wire (i.e., catalyzer) in catalytic chemical vapor deposition (Cat-CVD, which is also known as hot wire CVD) processes are identified with a use of a low-energy mass analyzed ion beam system. The mass analysis shows that dominant fragment ions from dimethylsilane are H1 +, H2 +, CH3 +, Si+, SiH3 +, SiCH4 +, SiC2H+, and SiC2H7 +. The energy distributions of these ions are also measured. It is found that the spreads of the energy distributions are narrow and no energetic ions are produced, suggesting that the produced ions are unlikely to cause any significant damage to the deposited films in actual dimethylsilane Cat-CVD processes. The ion production rates are found to be strongly dependent on the catalyzer temperature.

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“…[1][2][3][4][5] The source materials for Cat-CVD had been limited to simple molecules such as silane (SiH 4 ) and ammonium (NH 3 ), but recently, we found that various films containing carbon can be grown at low temperatures below 400 C by using organic Si compounds as CVD sources. 6,7) The fabrication of such C-containing films has opened up new applications for Cat-CVD to the production of, for example, the functional coating on mechanical components and plastic materials. Hence, we called this new branch of Cat-CVD, where organic compounds are used as the CVD source, ''Organic Cat-CVD''.…”

Section: Introductionmentioning

confidence: 99%

“…7) The Si-O-C films, heavily C-doped SiO x in other words, 7) are transparent to visible light and hence they can be used not only for electronic applications but also as optical coating films. Typical optical coating materials are silicon dioxide (SiO 2 ) with a refractive index of 1.4 and alumina (Al 2 O 3 ) with an index of 1.6.…”

Section: Introductionmentioning

confidence: 99%

Optical and Thermal Properties of Si–O–C Films Grown by Organic Catalytic Chemical Vapor Deposition Using Organic Silicon

Yagi

Nakayama

Miura

et al. 2004

Jpn. J. Appl. Phys.

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Optical, thermal and mechanical properties of Si-O-C ternary alloy films grown by organic catalytic chemical vapor deposition (CVD) were studied in comparison with those of Si-O films grown by electron-beam evaporation and AlN grown by electron cyclotron resonance sputtering. Si-O-C with Si: 36 at.%, O: 46 at.%, and C: 18 at.%, grown using TEOS, shows a relatively high refractive index of around 1.9 and a small extinction coefficient of less than 0.01 at wavelengths between 500 nm and 1000 nm. The value of the extinction coefficient is roughly five times smaller than that of SiO films grown by electron-beam evaporation. The thermal conductivity of 0.64 W/mÁK and the stress of the film are comparable with those of SiO. The results indicate that Si-O-C grown by organic catalytic CVD using TEOS is a promising material for optical applications such as laser diodes and semiconductor optical amplifiers.Growth period = 60 min. Thickness: Si-C = 0.47 mm, Si-O-C: DMDMOS = 1.25 mm, Si-O-C: TEOS = 2.24 mm Jpn.

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Characterization of Cat-CVD grown Si–C and Si–C–O dielectric films for ULSI applications

Cited by 18 publications

References 5 publications

Microstructure and morphology of SiOx film deposited by APCVD

Microstructure and morphology of SiOx film deposited by APCVD

Fragment Ions of Dimethylsilane Produced by Hot Tungsten Wires

Optical and Thermal Properties of Si–O–C Films Grown by Organic Catalytic Chemical Vapor Deposition Using Organic Silicon

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