Characterization of bulk damage in CMOS MAPS with deep N-well collecting electrode

Zucca,; Ratti, L.; Traversi, G.; Bettarini, S.; Morsani,; Rizzo, G.; Bosisio,; Rashevskaya, I.; Cindro,

doi:10.1109/radecs.2011.6131308

Cited by 3 publications

(5 citation statements)

References 16 publications

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“…This section will describe the procedure followed to irradiate the devices under test (DUTs) and discuss the characterization results. For what concerns the setups and methods used for the measurements presented in the following, in particular those based on radioactive and laser sources, reference can be made to a paper previously published by the authors [12].…”

Section: Characterization Resultsmentioning

confidence: 99%

“…Also data relevant to DNW MAPS devices, fabricated in a 130 nm CMOS process with triple well option and featuring a cm resistivity in the sensitive layer (the same as in the case of the standard resistivity epitaxial layer in the quadruple well technology) have been included in the same figure. The names M1 and M2 refer to sensors incorporating different solutions for the collecting electrode layout [12]. DNW MAPS were irradiated with different fluence steps as compared to quadruple well devices, namely at , , and -MeV-neutron equivalent cm .…”

Section: A Neutron Irradiationmentioning

confidence: 99%

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Quadruple Well CMOS MAPS With Time-Invariant Processor Exposed to Ionizing Radiation and Neutrons

Ratti

Traversi

Zucca

et al. 2014

IEEE Trans. Nucl. Sci.

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Monolithic active pixel sensors featuring a time-invariant front-end channel have been fabricated in a quadruple well CMOS process in the frame of an R&D project aiming at developing low material budget, radiation hard detectors for tracking applications. MAPS prototypes have been exposed to integrated fluences up to MeV neutron equivalent cm to test the device tolerance to bulk damage also for different values of the epitaxial layer resistivity. Moreover, samples of the same device have been irradiated with -rays from a source, reaching a final dose exceeding 10 Mrad, to study ionizing radiation effects. This work discusses the test results, obtained through different measurement techniques, and the mechanisms underlying performance degradation in irradiated quadruple well CMOS MAPS.Index Terms-Bulk damage, CMOS maps, ionizing radiation, quadruple well process. I. SUMMARYT HE search for charged particle trackers with the capability for precise momentum measurements at the future high luminosity colliders (B-factories, International Linear Collider [1], [2]), has prompted several research groups in the particle physics community to explore solutions involving the use of the so called monolithic active pixel sensors (MAPS) in CMOS technology. While, on the one hand, the spatial resolution they are made to achieve in imaging applications (the area where they first emerged and thrive [3]) is much higher than required of particle trackers, on the other hand they can provide an appealing solution to the design of multilayer thin detectors. In a monolithic sensor, the readout electronics is fabricated in the Manuscript

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Section: Characterization Resultsmentioning

confidence: 99%

Section: A Neutron Irradiationmentioning

confidence: 99%

Quadruple Well CMOS MAPS With Time-Invariant Processor Exposed to Ionizing Radiation and Neutrons

Ratti

Traversi

Zucca

et al. 2014

IEEE Trans. Nucl. Sci.

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“…At the same time, the peak is shifted towards lower amplitude values, as a result of a decrease in the front-end charge sensitivity also due to charge build up in the STI of some critical devices. DNW MAPS of the same kind have also been irradiated with neutrons from a Triga MARK II nuclear reactor to test bulk damage effects [73]. The final fluence, 6.7×10 12 1-MeV-neutron equivalent/cm 2 , was reached after a few, intermediate steps.…”

Section: Radiation Tolerancementioning

confidence: 99%

“…One point worth mentioning is that the FTOF is a 2D-device, as shown on Figure 8. 73. This means that the K/π separation is not only coming from the photoelectron timing but also from the spatial distribution of the photon hits on the MCP-PMTs.…”

Section: Superb Detector Technical Design Reportmentioning

confidence: 99%

SuperB Technical Design Report

Baszczyk,

Dorosz,

Kolodziej

et al. 2013

Preprint

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In this Technical Design Report (TDR) we describe the SuperB detector to be installed on the SuperB e + e − high luminosity collider. The SuperB asymmetric collider, foreseen to be constructed on the Tor Vergata campus near the INFN Frascati National Laboratory, is designed to operate both at the Υ (4S) energy in the center of mass with a luminosity of 10 36 cm −2 s −1 and at the τ /charm production threshold with a luminosity of 10 35 cm −2 s −1 . This high luminosity, producing a data sample about a factor 100 larger than present B Factories would allow investigation of new physics effects in rare decays, CP Violation and Lepton Flavour Violaion. This document details the detector design presented in the Conceptual Design Report (CDR) in 2007. The R&D and engineering studies perfomed to arrive at the full detector design are described, and an updated cost estimate is presented . PrefaceFlavour physics not only provides insight in the physics of the standard model but also offers great discovery potential for new physics processes, as the B-Factories experiments, BABAR at SLAC and Belle at KEK, have demonstrated very effectively. Increasing the luminosity has been identified from the very beginning as the key element to extend the physics reach of these machines. Since 2003 a group of physicists began to explore the physics potential of very high luminosity B-Factory machines. An upgrade of the the PEP-II accelerator was initially investigated; then the BABAR and Belle community started in 2004 a series of joint workshops in Hawaii.The SuperB Project was formally born in 2005 when INFN inserted in its three-years planning document the intention of building a high luminosity flavour factory in the Frascati area. In the course of the years SuperB has evolved from an intention into a full-fledged project, with a Conceptual Design Report published in 2007, progress reports in 2009, and a formal collaboration structure setup in 2010 with hundreds of members from several countries. All aspects of the project, physics potential, accelerator design, detector design, successfully passed several international reviews setup by INFN. In 2010 SuperB was inserted in the Italian Research Ministry National Research Plan as Flagship Project, and a good fraction of the required funds were allocated, although not the full amount. The decision to build SuperB on the land of the University of Rome Tor Vergata led, in 2011, to the formation of the Cabibbo Laboratory consortium between INFN and TorVergata, with the explicit mission of constructing and managing a new research infrastructure for flavour physics. A ministerial cost and schedule review of the accelerator project was held in fall 2012. A combination of a more realistic cost estimates and the unavailability of funds due of the global economic climate led to a formal cancelation of the project on Nov 27, 2012.The community who had been committed to the project for so long, although devastated by the sudden cancelation, decided to try to preserve and document as much as possi...

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“…Concerning the particle sensing properties, the beam test of the largest DNW device fabricated so far (APSEL4D) showed that the detection efficiency is limited to slightly more than 90% because of the PMOS N-wells inside the pixel. The nonnegligible amount of bulk displacement damage expected in the SVT Layer0 may impair the charge collection performance of the relatively low-resistivity, undepleted substrate of a standard CMOS technology [6]. The threat of interferences from full-swing logic signals running across the pixel matrix leads to operate the device at a digital supply voltage below the nominal value, which prevents to achieve the best speed performance from the digital readout.…”

Section: Advanced Pixel Sensors For the Superb Svtmentioning

confidence: 99%

Super B Vertex and Vertical integration

Re¹

2012

Proceedings of the 20th Anniversary International Workshop on Vertex Detectors — PoS(Vertex 2011)

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Characterization of bulk damage in CMOS MAPS with deep N-well collecting electrode

Cited by 3 publications

References 16 publications

Quadruple Well CMOS MAPS With Time-Invariant Processor Exposed to Ionizing Radiation and Neutrons

Quadruple Well CMOS MAPS With Time-Invariant Processor Exposed to Ionizing Radiation and Neutrons

SuperB Technical Design Report

Super B Vertex and Vertical integration

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