Quadruple Well CMOS MAPS With Time-Invariant Processor Exposed to Ionizing Radiation and Neutrons

Abstract

Monolithic active pixel sensors featuring a time-invariant front-end channel have been fabricated in a quadruple well CMOS process in the frame of an R&D project aiming at developing low material budget, radiation hard detectors for tracking applications. MAPS prototypes have been exposed to integrated fluences up to MeV neutron equivalent cm to test the device tolerance to bulk damage also for different values of the epitaxial layer resistivity. Moreover, samples of the same device have been irradiated with -rays from a source, reaching a final dose exceeding 10 Mrad, to study ionizing radiation effects. This work discusses the test results, obtained through different measurement techniques, and the mechanisms underlying performance degradation in irradiated quadruple well CMOS MAPS.Index Terms-Bulk damage, CMOS maps, ionizing radiation, quadruple well process. I. SUMMARYT HE search for charged particle trackers with the capability for precise momentum measurements at the future high luminosity colliders (B-factories, International Linear Collider [1], [2]), has prompted several research groups in the particle physics community to explore solutions involving the use of the so called monolithic active pixel sensors (MAPS) in CMOS technology. While, on the one hand, the spatial resolution they are made to achieve in imaging applications (the area where they first emerged and thrive [3]) is much higher than required of particle trackers, on the other hand they can provide an appealing solution to the design of multilayer thin detectors. In a monolithic sensor, the readout electronics is fabricated in the Manuscript

The effect of the displacement damage on the Charge Collection Efficiency in Silicon Drift Detectors for the LOFT satellite

“…The variation of the CCE produced by the Total Ionising Dose (TID) in silicon detectors is discussed for example in ref. [23,24]. The authors show that the decrease of CCE is negligible for a TID of tens [23] or even hundreds [24] of krad.…”

“…[23,24]. The authors show that the decrease of CCE is negligible for a TID of tens [23] or even hundreds [24] of krad. Consequently, the TID of ∼ 400 rad(Si) provided to the SDD during our irradiation at PIF is not expected to produce significant effects on the CCE.…”