Characterization of anisotropic stress around Si trenches by polarized Raman spectroscopy

Yoshikawa, Masanobu; Maegawa, M.; Katagiri, Gen; Ishida, Hideyuki

doi:10.1063/1.360287

Cited by 63 publications

(33 citation statements)

References 7 publications

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“…[7][8][9] The residual stress in soft magnetic substrates, however, has hitherto been evaluated using an ellipsometer 10 which provides information closely associated with the electronic transition from the ground state to the excited one. However, the ellipsometer is not suitable for the evaluation of residual stress in rough surfaces, because this instrument necessarily requires the surface on which the laser beam is incident to be optically polished to a surface roughness of less than 0.8 m in an area of 2-10 mm.…”

Section: Introductionmentioning

confidence: 99%

“…[7][8][9] In practice, Evans and Ushida 7 have shown that the linewidth of the Raman spectrum at 270 cm Ϫ1 in GaAs increases linearly with increasing particle size of polishing powder, and the broadening of the linewidth results from the microstructure disorder generated during polishing. We thus considered that a similar phenomenon is also observed in the Raman spectra of the soft magnetic Mn-Zn ferrite.…”

Section: Introductionmentioning

confidence: 99%

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Effect of polishing stress on Raman spectra of the Mn–Zn ferrite

Yamashita

Ikeda²

2004

Journal of Applied Physics

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Articles you may be interested inEffect of Dy+3 on the structure and static magnetic properties of spin-glass MnZn ferrite nanoparticles J. Appl. Phys. 113, 154301 (2013); 10.1063/1.4798381 Neutron diffraction and ferromagnetic resonance studies on plasma-sprayed MnZn ferrite films J. Appl. Phys. 97, 033902 (2005); 10.1063/1.1831551 Structure and magnetic properties of rf thermally plasma synthesized Mn and Mn-Zn ferrite nanoparticlesRaman scattering measurements were made on polycrystalline Mn 0.62 Zn 0.30 Fe 2.08 O 4 ferrites with various degrees of stress generated during the polishing process, in the temperature range from 175 to 603 K. Raman spectra were found at energies of 337, 464, and 620 cm Ϫ1 in substrates with low stress. The integral intensities at 337 and 620 cm Ϫ1 increased significantly with decreasing residual stress stored in the surface. The former integral intensity remained constant with increasing temperature and decreased in the vicinity of the Néel point, while the latter one decreased linearly with increasing temperature through the Néel point. However, their linewidths changed little with stress and temperature, unlike the case of GaAs. These two spectra of the Mn-Zn ferrite, therefore, are considered to arise predominantly from the spin-dependent phonon scattering, in addition to the usual optical phonon scattering. It was thus found that the Raman intensity associated closely with the magnetic ordering is highly sensitive to the residual stress in the crystal, as in the case of the optical phonon, and Raman spectroscopy is also applicable to the evaluation of the stress in soft magnetic ferrites.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of polishing stress on Raman spectra of the Mn–Zn ferrite

Yamashita

Ikeda²

2004

Journal of Applied Physics

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“…Recently, the forbidden optical phonon modes, the TO phonon modes, were excited even under the (001) Si backscattering geometry, using a high-numerical aperture (NA) liquid-immersion lens [22][23][24]. If all of the three optical phonon modes are detectable, the unknown three components of a stress tensor in Si can be obtained in theory [25][26][27][28][29][30][31][32][33][34][35]. The high-NA liquid-immersion Raman spectroscopy has great potential for measuring the complicated stress states in Si with high spatial resolution.…”

Section: Introductionmentioning

confidence: 99%

Stress Measurements in Si and SiGe by Liquid-Immersion Raman Spectroscopy

Kosemura¹,

Tomita²,

Usuda³

et al. 2012

Advanced Aspects of Spectroscopy

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“…x 0 ¼ 1 ffiffi ffi 2 p ðÀ1; 1; 0Þ; y 0 ¼ ð0; 0; 1Þ; z 0 ¼ 1 ffiffi ffi 2 p ð1; 1; 0Þ; (7) and biaxial stress r 0 11 along the x 0 direction (horizontal direction) and r 0 22 along the y 0 direction (perpendicular direction) on a (110) face, Raman frequency shift Dx is written as 25,26 …”

Section: B Frequency Shift and Stress On A Cross-sectional Surfacementioning

confidence: 99%

“…The x 2 and x 1 modes are Raman active in the backscattering configuration from the (110) plane and observed in (x 0 , x 0 ) and (x 0 , y 0 ) configurations, respectively. [25][26][27][28] The notations (x 0 , x 0 ) and (x 0 , y 0 ) represent that the polarization of exciting light is along the x 0 direction while the polarization of scattered light is along the x 0 and y 0 directions, respectively. We choose the backscattering configuration from the (110) plane and the directions of the exciting and scattered lights are along the z 0 direction.…”

Section: B Frequency Shift and Stress On A Cross-sectional Surfacementioning

confidence: 99%

Measurement of temperature-dependent stress in copper-filled silicon vias using polarized Raman spectroscopy

Sugie

Kosaka

Seki

et al. 2013

Journal of Applied Physics

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An experimental method to determine the temperature dependence of residual stress in threedimensional (3D) structures was developed using polarized Raman spectroscopy. Stresses of a copper-filled silicon via at three temperatures, 223, 298, and 413 K were derived by measuring the frequency shift of the optical phonons through the backscattering geometry from the cross-section of the structure and assuming non-isotropic biaxial (horizontal and depth) stresses on the crosssection. Both stress components changed from tensile to compressive in almost all areas as the temperature changed from 213 to 413 K. The absolute stress values increased at both low and high temperatures and were smallest at 298 K, which was nearest to the process temperature of copper filling by plating. The main cause of stress is considered to be the difference in the coefficient of thermal expansion between copper and silicon. These results indicate that the temperature dependence of stress of copper-filled vias is affected mainly by their fabrication temperature. Process temperature is one of the key factors for the reduction of thermal stress in 3D structures such as integrated circuits connected by through-silicon vias. V C 2013 AIP Publishing LLC.

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Characterization of anisotropic stress around Si trenches by polarized Raman spectroscopy

Cited by 63 publications

References 7 publications

Effect of polishing stress on Raman spectra of the Mn–Zn ferrite

Effect of polishing stress on Raman spectra of the Mn–Zn ferrite

Stress Measurements in Si and SiGe by Liquid-Immersion Raman Spectroscopy

Measurement of temperature-dependent stress in copper-filled silicon vias using polarized Raman spectroscopy

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