2008
DOI: 10.1063/1.2834701
|View full text |Cite
|
Sign up to set email alerts
|

Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360nm: Photoemission assessments

Abstract: The absolute responsivity of a metal-semiconductor-metal ͑MSM͒ photodiode based on high quality AlN material has been tested from the vacuum ultraviolet ͑vuv͒ to the near UV wavelength range ͑44-360 nm͒. The metal finger Schottky contacts have been processed to 2 m in width with spacing between the contacts of 4 m. In the vuv wavelength region, the measurement methodology is described in order to distinguish the contribution of the photoemission current from the internal diode signal. In the wavelength range o… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

1
42
0

Year Published

2009
2009
2024
2024

Publication Types

Select...
9

Relationship

1
8

Authors

Journals

citations
Cited by 58 publications
(43 citation statements)
references
References 16 publications
1
42
0
Order By: Relevance
“…Further detector-based comparisons were recently performed against a dosimetric free-air ionisation Review Article chamber standard in the X-ray region [46] and against radiometric scales realised by other national metrology institutes in the UV, VUV, and EUV ranges via calibrated photodiodes. Based on the high-accuracy spectral responsivity scale, and by use of dispersed SR of high spectral purity, PTB has supported detector development for industrial and scientific applications [49][50][51][52]. Furthermore fundamental quantities were determined, such as the mean energy required for producing an electron-hole pair in silicon and gallium arsenide [53][54][55], the quantum efficiencies of gold and copper [56,57] and of caesium iodide photocathodes [58], the electron-impact ionisation and photoionisation cross sections of noble gases [59][60][61][62], and the cross sections for resonant Raman scattering on silicon [63].…”
Section: Detector-based Radiometrymentioning
confidence: 99%
“…Further detector-based comparisons were recently performed against a dosimetric free-air ionisation Review Article chamber standard in the X-ray region [46] and against radiometric scales realised by other national metrology institutes in the UV, VUV, and EUV ranges via calibrated photodiodes. Based on the high-accuracy spectral responsivity scale, and by use of dispersed SR of high spectral purity, PTB has supported detector development for industrial and scientific applications [49][50][51][52]. Furthermore fundamental quantities were determined, such as the mean energy required for producing an electron-hole pair in silicon and gallium arsenide [53][54][55], the quantum efficiencies of gold and copper [56,57] and of caesium iodide photocathodes [58], the electron-impact ionisation and photoionisation cross sections of noble gases [59][60][61][62], and the cross sections for resonant Raman scattering on silicon [63].…”
Section: Detector-based Radiometrymentioning
confidence: 99%
“…Over the wavelength range of 170 nm to 200 nm, the photoresponse is constant, in contrast to the diamond MSM24-r photodetector, but with a lower responsivity of approximately 4.5 mA/W at a bias voltage of + 30 V. Then the photoresponse increases (depending on the polarity of the applied voltage) due mainly to the photoemission current contribution [18]. The photo-emitted electrons are pulled back to the device due to the high positive voltage of + 30 V applied.…”
Section: Absolute Spectral Responsivitymentioning
confidence: 99%
“…5), and moderate external quantum efficiency (EQE) due to electrode shadowing, if they are not semi-transparent in the wavelength range of interest. Dedicated corrective design can however be foreseen [18].…”
Section: Motivation For Utilizing a Planar Structure -Msm Photodetectorsmentioning
confidence: 99%
“…Among them, SiC (Wright & Horsfall 2007), GaN (Monroy et al 1999) and II-VI compound-based detectors (Sou et al 2001) show a photodetector cut-off wavelength longer than 300 nm, whereas cBN , AlN (Butun et al 2006;Li et al 2006;Dahal et al 2007;BenMoussa et al 2008) and diamond-based (Adam et al 2004;Balducci et al 2005 By their nature, cBN, AlN and diamond semiconductors are the primary choice as the photosensitive materials for solar EUV and VUV photon detection (spectral range of interest 10 k 200 nm) and meet the requirements for UV radiometers planned to study the Sun since they provide high radiation hardness, near-ultraviolet (NUV) and visible-blindness (wavelength cut-off value 225 nm), mechanical, chemical and thermal stability and no need of cooling system (i.e., roomtemperature operation).…”
Section: Photodetectorsmentioning
confidence: 99%