Characterization of AlGaN/GaN and AlGaN/AlN/GaN HEMTs in terms of mobility and subthreshold slope

Prasad, Shyam Baboo; Dwivedi, Amit Krishna; Islam, Aminul

doi:10.1007/s10825-015-0751-8

Cited by 25 publications

(4 citation statements)

References 17 publications

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“…The subthreshold swing (SS), S factor, is an important parameter that explains how effectively a device can be turned off as the logic switch in the subthreshold state. As presented in Figure c, by adding the u-GaN cap layer, the HEMTs display an outstanding subthreshold behavior with 81 mV/dec at V ds = 10 V, which shows an excellent gate control characteristic near the cut-off voltage and the value is close to the superior result obtained on planar HEMTs . These improved properties are obviously attributed to the low leakage current by using the u-GaN cap.…”

Section: Results and Discussionsupporting

confidence: 58%

“…As presented in Figure 4c, by adding the u-GaN cap layer, the HEMTs display an outstanding subthreshold behavior with 81 mV/dec at V ds = 10 V, which shows an excellent gate control characteristic near the cut-off voltage and the value is close to the superior result obtained on planar HEMTs. 48 These improved properties are obviously attributed to the low leakage current by using the u-GaN cap. With the u-GaN, a lower ideality factor and a higher Schottky barrier height is enabled, as has been reported that by designing an InGaN, 49 InGaAs, 50 and GaN 51 cap layers to enhance the Schottky barrier height in the literature.…”

Section: Resultsmentioning

confidence: 99%

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a-Axis GaN/AlN/AlGaN Core–Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors

Song

Wang

et al. 2017

ACS Appl. Mater. Interfaces

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Micro/nanowire-based devices have been envisioned as a promising new route toward improved electronic and optoelectronic applications, which attracts considerable research interests. However, suffering from applicable strategies to synthesize uniform core-shell structures to meet the requirement for the investigations of electrical transport behaviors along the length direction or high electron mobility transistor (HEMT) devices, heterojunction wire-based electronics have been explored limitedly. In the present work, GaN/AlN/AlGaN core-shell heterojunction microwires on patterned Si substrates were synthesized without any catalyst via metalorganic chemical vapor deposition. The as-synthesized microwires had low dislocation, sharp, and uniform heterojunction interfaces. Electrical transport performances were evaluated by fabricating HEMTs on the heterojunction microwire channels. Results demonstrated that a normally off operation was achieved with a threshold voltage of 1.4 V, a high on/off current ratio of 10, a transconductance of 165 mS/mm, and a low subthreshold swing of 81 mV/dec. The normally off operation may attribute to the weak polarization along semipolar facets of the heterojunction, which leads to weak constrain of 2DEG.

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Section: Results and Discussionsupporting

confidence: 58%

Section: Resultsmentioning

confidence: 99%

a-Axis GaN/AlN/AlGaN Core–Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors

Song

Wang

et al. 2017

ACS Appl. Mater. Interfaces

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“…The interface state density (D it ) under the gate of the HEMTs is characterized by the subthreshold slope (SS) method. By analogy with metal-oxide-semiconductor field-effect transistors (MOSFETs) [3], the subthreshold slope for HEMTs is given by [13,14,15] where ς is a non-ideality factor that is related to the interface trap density; k is the Boltzmann constant; q is the electronic charge, and T is the temperature (K). From Table I, the SS value of the HEMT with pre-gate treatment is lowest among of the HEMTs studied here.…”

Section: Resultsmentioning

confidence: 99%

High-temperature stability of improved AlGaN/AlN/GaN HEMT with pre-gate metal treatment

Lin

Goa

2019

IEICE Electron. Express

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This study proposes the investigation of using the (NH 4) 2 S x solution to form the AlGaN surface passivation on the AlGaN/GaN high electron mobility transistors (HEMTs). Both treatment schemes are implemented on separate pieces of the same HEMT wafer, including (NH 4) 2 S x pregate and post-gate metal treatments. Temperature-dependent characteristics of the HEMTs are also studied. Experimental results demonstrate that by the surface treatment prior to metal, the performance of the studied HEMTs can be improved, including thermal stability, dc and high-frequency characteristics. Furthermore, the interface state density (D it) of the studied HEMT is studied by the subthreshold slope method. To the best of our knowledge, this is the first report on comparison of AlGaN/AlN/GaN HEMTs with pre-gate and post-gate metal treatments.

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“…9 GaN based HEMTs are better in terms of material properties like higher breakdown voltage, high electron density, higher electron saturation velocity and larger bandgap energy as compared to existing material like gallium arsenide (GaAs). 10,11 GaN based HEMT shows better performance in terms of polarization (both spontaneous and piezoelectric) for 30%-40% aluminum content in AlGaN barrier layer. They are more suitable for high-power applications such as power amplifier and low-noise applications such as low noise amplifier (LNA).…”

Section: Introductionmentioning

confidence: 99%

Characterization of AlGaN/GaN based HEMT for low noise and high frequency application

Dubey

Mishra

Islam

2021

Int J Numerical Modelling

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This article presents a detailed study on AlGaN/GaN based HEMT for DC (such as ID − VDS, ID − VGS and gm), RF (such as cut off frequency, fT and maximum oscillation frequency, fMAX) and noise parameters (such as minimum noise figure (NFmin), noise resistance (Rn) and optimum reflection coefficient (Гopt)). AlGaN/GaN based HEMT having gate length 250 nm and 500 nm have been simulated and verified on the Silvaco TCAD tool.

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Characterization of AlGaN/GaN and AlGaN/AlN/GaN HEMTs in terms of mobility and subthreshold slope

Cited by 25 publications

References 17 publications

a-Axis GaN/AlN/AlGaN Core–Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors

a-Axis GaN/AlN/AlGaN Core–Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors

High-temperature stability of improved AlGaN/AlN/GaN HEMT with pre-gate metal treatment

Characterization of AlGaN/GaN based HEMT for low noise and high frequency application

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