2012
DOI: 10.1016/j.physb.2011.09.078
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Characterization of AlGaN-based metal–semiconductor solar-blind UV photodiodes with IrO2 Schottky contacts

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Cited by 6 publications
(7 citation statements)
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“…Comparing the parameters to that of a previous study done by the same authors [3], we found that the average ideality factor degraded by approximately 20% from 1.57 to 1.97, a 3% higher Schottky barrier height from 1.19 eV to 1.22 eV and an 16% increase in series resistance from 100 Ω to 120 Ω. The degradation in ideality factor and higher Schottky barrier height could be a result of the epoxy bonding process, by which some of the epoxy may have made direct contact to the semiconductor material.…”
Section: Electrical Characterizationmentioning
confidence: 86%
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“…Comparing the parameters to that of a previous study done by the same authors [3], we found that the average ideality factor degraded by approximately 20% from 1.57 to 1.97, a 3% higher Schottky barrier height from 1.19 eV to 1.22 eV and an 16% increase in series resistance from 100 Ω to 120 Ω. The degradation in ideality factor and higher Schottky barrier height could be a result of the epoxy bonding process, by which some of the epoxy may have made direct contact to the semiconductor material.…”
Section: Electrical Characterizationmentioning
confidence: 86%
“…Each quadrant was characterized with an optoelectronic system [3]. Measurements were made by placing the probes on the chip carrier strips that were epoxy wire bonded to the corresponding contacts.…”
Section: Methodsmentioning
confidence: 99%
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