AlxGa1−xN/GaN/AlN heterostructures grown on Si(111) substrates by MBE for MSM UV photodetector applications

Yusoff, Mohd Zaki Mohd; Hassan, Z.; Hassan, H. Abu; Abdullah, M.J.; Rusop, M.; Pakhuruddin, Mohd Zamir

doi:10.1016/j.mssp.2015.02.048

Cited by 21 publications

(2 citation statements)

References 39 publications

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“…The results show that by increasing the annealing temperature as well as the light intensities, the device shows better performance. In order to evaluate the current gain and sensitivity, the following equations were used [42][43];…”

Section: Current-time (I-t) Calculations At 10 Vmentioning

confidence: 99%

Enhanced photodetection performance of sputtered cupric oxide thin film through annealing process

Tariq¹,

Afzal²,

Rafique³

2021

Preprint

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This study demonstrates an improvement in the photodetection response of a Cupric Oxide (CuO) thin film through the annealing process. The CuO thin film (400 nm thickness) was deposited on a silicon substrate using DC magnetron sputtering system. Annealing of the as-deposited film was carried out in a muffle furnace at 400 and 500 oC for two hours. X-ray diffraction pattern revealed the formation of a single phase CuO film whose crystallinity improved with increase of the annealing temperature. The field emission scanning electron microscopy indicated a compact and fine granular strcutre of the as-seposited film whereas the segregation and agglomeration of grains was observed after the film’s annealing. The photodetection performance of CuO film with Al contacts was investigated under the exposure of visible light (λ = 460 nm). The current-voltage graphs of as-deposited and annealed films displayed Schottky contact formation between the metal and semiconductor, owing to a lower work function of Al than that of the CuO. The photo-to-dark current ratio of the device was significantly enhanced after the film’s annealing. The increase in photocurrent became more pronounced upon increasing the light intensity from 58.4 to 511 µW/cm2. The maximum current gain and sensitivity values were found to be 66 and 7086.8 % respectively at 10V bias for the film annealed at 500 oC. The rise and fall time of the Al/CuO/Al photodetector was decreased after the film’s annealing.

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Section: Current-time (I-t) Calculations At 10 Vmentioning

confidence: 99%

Enhanced photodetection performance of sputtered cupric oxide thin film through annealing process

Tariq¹,

Afzal²,

Rafique³

2021

Preprint

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“…Deep ultraviolet (DUV, 190–350 nm) photodetectors have attracted much interest because of their broad application potential in solar UV monitoring, flame detection, secure space communication, and biological analysis. 1–3 Wide-bandgap semiconductors including Mg x Zn 1 −x O, 4 Al x Ga 1 −x N, 5 diamond, 6 and Ga 2 O 3 7,8 are desirable candidates for the fabrication of DUV photodetectors. In particular, Ga 2 O 3 is considered one of the most promising materials for DUV photodetector applications because of its ultra-wide bandgap (4.9 eV) without doping or alloying processes and relatively low cost.…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric enhanced Ga₂O₃/BFMO-based deep ultraviolet photovoltaic detectors with dual electric fields for photogenerated carrier separation

Cheng,

Mao,

Zhu

et al. 2023

J. Mater. Chem. C

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A Highly Responsive Self‐Driven UV Photodetector Using GaN Nanoflowers

Aggarwal

Krishna

Sharma

et al. 2017

Adv Elect Materials

101

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The rising demand for optoelectronic devices to be operable in adverse environments necessitates the sensing of ultraviolet (UV) radiation. Here, a self‐driven, highly sensitive, fast responding GaN nanoflower based UV photodetector is reported. By developing unique structures, the light absorption increases efficiently and a maximum responsivity of 10.5 A W−1 is achieved at 1 V bias. The reported responsivity is the highest among the GaN UV photodetectors on Si substrates and commercially available Si‐based UV photodetectors. Under self‐driven condition, the photodetector exhibits very low dark current (≈nA) with a very high responsivity (132 mA W−1) and detectivity (2.4 × 1010 Jones). A remarkably high light‐to‐dark current ratio of ≈260 signifies extremely high photodetection gain compared to planar GaN‐based photodetectors. The self‐driven and biased photodetector device yields highly stable rise and decay time response. A model based on band theory elucidates the origin of self‐driven photodetectors. Implementation of the innovative growth design structures assures an exceptionally high sensitivity toward UV signal, which is capable of substituting the existing technology of UV photodetectors. High responsivity and detectivity from devices based on the GaN nanoflower‐like structure with the advantage of high surface/volume ratio can have numerous applications in fabrication of nanoscale optoelectronic high performance devices such as self‐driven UV photodetectors.

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AlxGa1−xN/GaN/AlN heterostructures grown on Si(111) substrates by MBE for MSM UV photodetector applications

Cited by 21 publications

References 39 publications

Enhanced photodetection performance of sputtered cupric oxide thin film through annealing process

Enhanced photodetection performance of sputtered cupric oxide thin film through annealing process

Ferroelectric enhanced Ga₂O₃/BFMO-based deep ultraviolet photovoltaic detectors with dual electric fields for photogenerated carrier separation

A Highly Responsive Self‐Driven UV Photodetector Using GaN Nanoflowers

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AlxGa1−xN/GaN/AlN heterostructures grown on Si(111) substrates by MBE for MSM UV photodetector applications

Cited by 21 publications

References 39 publications

Enhanced photodetection performance of sputtered cupric oxide thin film through annealing process

Enhanced photodetection performance of sputtered cupric oxide thin film through annealing process

Ferroelectric enhanced Ga2O3/BFMO-based deep ultraviolet photovoltaic detectors with dual electric fields for photogenerated carrier separation

A Highly Responsive Self‐Driven UV Photodetector Using GaN Nanoflowers

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Ferroelectric enhanced Ga₂O₃/BFMO-based deep ultraviolet photovoltaic detectors with dual electric fields for photogenerated carrier separation