Characterization of Al/Cu3BiS3/buffer/ZnO solar cells structure by TEM

Mesa, F.; Dussán, A.; Sandino, J.; Lichte, Hannes

doi:10.1007/s11051-012-1054-7

Cited by 14 publications

(14 citation statements)

References 15 publications

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“…Mesa reports an electron microscopy study of a substrategeometry device, but it was not photoactive. 273 In other work, solution growth of the compound into a dye cell structure MRS eNeRgy & SUSTAINABIlITy // V O L U M E 5 // e 1 3 // www.mrs.org/energy-sustainability-journal n 45 yielded 1.28% conversion efficiency, a respectable voltage of 448 mV, an excellent fill factor (61%), but was let down by a low photocurrent of 4.5 mA/cm 2 .…”

Section: Devices With Cu 3 Bismentioning

confidence: 94%

Copper—antimony and copper—bismuth chalcogenides—Research opportunities and review for solar photovoltaics

Peccerillo

Durose

2018

MRS Energy & Sustainability

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Section: Devices With Cu 3 Bismentioning

confidence: 94%

Copper—antimony and copper—bismuth chalcogenides—Research opportunities and review for solar photovoltaics

Peccerillo

Durose

2018

MRS Energy & Sustainability

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“…Numerous evaporation methods such as coevaporation, fast evaporation, thermal evaporation, and electron beam (EB) [21][22][23][24][25][26][27][28][29][30][31][32] have been employed for the deposition of Cu 3 BiS 3 thin films. Cu 3 BiS 3 thin films were deposited using two different attitudes:…”

Section: Vacuum-based Evaporation Deposition Methodsmentioning

confidence: 99%

“…For In 2 S 3 and CdS buffer layers, KPFM indicated negatively charged Cu 3 BiS 3 grain boundaries. In 2012 Mesa et al [27] presented the results from a study held on Al/Cu 3 BiS 3 /Buffer/ZnO, using a high-resolution transmission electron microscopy (HRTEM) with In 2 S 3 and ZnS as a buffer layer. The Cu 3 BiS 3 was prepared by two-stage co-evaporation process with film thickness of *1 lm as reported by Mesa et al [21,22].…”

Section: Vacuum-based Evaporation Deposition Methodsmentioning

confidence: 99%

A comprehensive review on synthesis and characterizations of Cu3BiS3 thin films for solar photovoltaics

Deshmukh

Kheraj

2017

Nanotechnol. Environ. Eng.

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Since the last few decades, light-absorbing materials based on CuInGaSe 2 (CIGS), CuInS 2 (CIS), and CdTe have dominated the research in thin-film solar cells.To fabricate large-scale solar cells from these materials, problems may arise due to limited availability of the constituents, viz. Se, In, Cd, and Te, and the toxicity of some of these elements. Hence, recent research efforts are attentive toward abundantly available non-toxic, larger value of absorption coefficient and non-conventional elements. The Cu 3 BiS 3 having wittichenite orthorhombic structure is one the most promising absorber layer candidates for low-cost thin-film solar cells. It has suitable direct band gap (1.10-1.86 eV), large absorption coefficient (10 5 cm -1 ) with composition of earth abundant, and relatively non-toxic and cost-effective constituents. Till now, a majority work was done on the preparation of Cu 3 BiS 3 thin films by various techniques. Therefore, a comprehensive review of recent literature of Cu 3 BiS 3 is urgently required. This paper will review the various techniques that have been used to deposit Cu 3 BiS 3 semiconductor with the hope of new paths for the beginner.

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“…15 Tuning the optical and electrical properties, Cu 3 BiS 3 thin films serve the role of an absorber in photovoltaic and photodetector devices. 16 Cu 3 BiS 3 is advantageous over the commercially available NIR PDs in terms of material availability and toxicity. Abundance of bismuth makes its utilization in pharmaceuticals, as a replacement for lead in ammunition, solders, and other materials where toxicity is a concern.…”

Section: Introductionmentioning

confidence: 99%

Near-infrared photoactive Cu3BiS3 thin films by co-evaporation

Murali

Madhuri

Krupanidhi

2014

Journal of Applied Physics

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Investigation of combinatorial coevaporated thin film Cu2ZnSnS4. I. Temperature effect, crystalline phases, morphology, and photoluminescence Semiconducting Cu 3 BiS 3 (CBS) thin films were deposited by co-evaporation of Cu, Bi elemental metallic precursors, with in situ sulphurisation, using a quartz effusion cell. Cu 3 BiS 3 thin films were structurally characterized by XRD and FE-SEM. The chemical bonding of the ions was examined by XPS. As deposited films were demonstrated for metal-semiconductor-metal near IR photodectection under lamp and laser illuminations. The photo current amplified to three orders and two orders of magnitude upon the IR lamp and 60 m W cm À2 1064 nm IR laser illuminations, respectively. Larger grains, made up of nano needle bunches aided the transport of carriers. Transport properties were explained based on the trap assisted space charge conduction mechanism. Steady state detector parameters like responsivity varied from 1.04 AW À1 at 60 m Wcm À2 to 0.22 AW À1 at 20 m Wcm À2 . Detector sensitivity of 295 was found to be promising and further could be tuned for better responsivity and efficiency in utilization of near infra-red photodetector. V C 2014 AIP Publishing LLC. [http://dx.

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Characterization of Al/Cu3BiS3/buffer/ZnO solar cells structure by TEM

Cited by 14 publications

References 15 publications

Copper—antimony and copper—bismuth chalcogenides—Research opportunities and review for solar photovoltaics

Copper—antimony and copper—bismuth chalcogenides—Research opportunities and review for solar photovoltaics

A comprehensive review on synthesis and characterizations of Cu3BiS3 thin films for solar photovoltaics

Near-infrared photoactive Cu3BiS3 thin films by co-evaporation

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