Characterization of advanced materials for high voltage/high temperature power electronics packaging

Hopkins, Douglas C.; Bowers, J.S.

doi:10.1109/apec.2001.912498

APEC 2001. Sixteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.01CH37181)

DOI: 10.1109/apec.2001.912498

|View full text |Cite

Characterization of advanced materials for high voltage/high temperature power electronics packaging

Douglas C. Hopkins¹,

J.S. Bowers²

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Publication Types

Select...

Other5

Relationship

Self Cite0

Independent5

Authors

Journals

Cited by 6 publications

(1 citation statement)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Additional challenges include accelerated degradation of the packaging components at high temperatures. [1] In response, this paper details several important aspects in developing a prototype for an all SiC power module. This paper compares substrates such as direct bond copper DBC, thick-film technology, and direct bond aluminum DBA.…”

mentioning

confidence: 99%

Development of an extreme temperature range silicon carbide power module for aerospace applications

Katsis

Zheng

2008

2008 IEEE Power Electronics Specialists Conference

View full text Add to dashboard Cite

A silicon carbide semiconductor power module is developed for operation at wide temperature extremes. The development of a device substrate, die-attach, interconnect system, and module DC interface is presented in this paper. Electrical and mechanical components of the package are tested and chosen for the best combination to work together as a system. This allows the package to withstand thermal cycling and demonstrate reliability through its operating temperature range of -50°C to 250°C.

show abstract

mentioning

confidence: 99%

Development of an extreme temperature range silicon carbide power module for aerospace applications

Katsis

Zheng

2008

2008 IEEE Power Electronics Specialists Conference

View full text Add to dashboard Cite

show abstract

Development of current-scalable emitter turn-off (ETO) thyristor module

Schmit

Chen²,

Zhang³

et al. 2005

Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, 2005. APEC 2005.

View full text Add to dashboard Cite

Characterization of encapsulants for high-voltage, high-temperature power electronic packaging

Yao

Chen

Lü

et al. 2010

2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Characterization of advanced materials for high voltage/high temperature power electronics packaging

Cited by 6 publications

References 4 publications

Development of an extreme temperature range silicon carbide power module for aerospace applications

Development of an extreme temperature range silicon carbide power module for aerospace applications

Development of current-scalable emitter turn-off (ETO) thyristor module

Characterization of encapsulants for high-voltage, high-temperature power electronic packaging

Contact Info

Product

Resources

About