Characterization of a SiC/SiC composite by X-ray diffraction, atomic force microscopy and positron spectroscopies

Bräuer, G.; Anwand, W.; Eichhorn, F.; Skorupa, W.; Höfer, Christian; Teichert, Christian; Kuriplach, J.; Čı́žek, J.; Procházka, I.; Coleman, P. G.; Nozawa, Takashi

doi:10.1016/j.apsusc.2005.08.096

Cited by 7 publications

(3 citation statements)

References 27 publications

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“…From this result, the AlN-related modes of 612 cm −1 (A 1g ), 654 cm −1 (E 2g ), and 666 cm −1 (E 1g ) were observed from positions x to z [47][48][49][50][51][52]. Although the intensity was observed to be low, a single peak related to Si of 519 cm −1 was also observed.…”

Section: Properties Of Si Crystal By Al-based Absorbermentioning

confidence: 80%

“…Six classes of peak causes were identified based on the EDS results in figures 6(a)-(c). These include the peak associated with S [37][38][39], the peak associated with Si and the peak associated with Al [40][41][42][43], the peak associated with C [44][45][46][47], the peak associated with SiC [48], and the peak associated with AlN [49]. Al has a FCC lattice structure with a density of 2.7 g cm −3 .…”

Section: Role Of Al-based Nano Absorbermentioning

confidence: 99%

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Insights into the growth of hexagonal Si crystals using Al-based nano absorber

Kim¹,

Lee²,

Ahn³

et al. 2022

Semicond. Sci. Technol.

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Although hexagonal (2H) silicon (Si) semiconductors exhibit excellent optical properties owing to their quasi-direct bandgap, their growth conditions, which require extremely high pressures, preclude their widespread use in industrial applications. The current study, therefore, proposes a novel approach for the facile growth of hexagonal Si at atmospheric pressure via a unique phenomenon known as Al-based nano absorber. A mixed-source hydride vapor phase (HVPE) method was used for the growth of the hexagonal Si single crystals employing a rapid interaction between GaCl3, AlCl, and SiCln gases at a high temperature of 1200 °C using a source mixture of Ga, Al, and Si. In this process, the Al-based nano absorber was formed, which resulted in the absorbance of Si atoms, rather than the growth of Al-based nano absorber, to form the Si crystals due to the subsequent lack of GaCl3 and AlCl sources. The hexagonal Si structure of these Si crystals was confirmed using scanning electron microscopy (FE-SEM), high-resolution X-ray diffraction (HR-XRD) spectroscopy, and Raman spectroscopy. Thus, the current study establishes atmospheric pressure mixed source HVPE as a facile approach for growing various allotropic crystals such as Si, C, or Ge via absorption of other atoms by an Al-based nano absorber.

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Section: Properties Of Si Crystal By Al-based Absorbermentioning

confidence: 80%

Section: Role Of Al-based Nano Absorbermentioning

confidence: 99%

Insights into the growth of hexagonal Si crystals using Al-based nano absorber

Kim¹,

Lee²,

Ahn³

et al. 2022

Semicond. Sci. Technol.

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“…Compared with oxide coating, non-oxide SiC with excellent mechanical, chemical and water wetting properties behave well with suitable coating phases in high temperature industry [17][18][19]. Yun et al [20] prepared SiC-coated graphite by chemical vapor reaction at above 1700°C, and the lowest weight loss of the coated graphite at 700°C was achieved at approximately 2 wt%.…”

Section: Introductionmentioning

confidence: 99%

Oxidation resistance and wettability of graphite/SiC composite

Yin

Chen

et al. 2018

IJMR

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The core-shell structure of graphite@SiC was synthesized at different calcination temperatures using the raw materials of microsilica and carboxy methylated cellulose (CMC). The oxidation resistance and wettability (with water) of graphite@SiC were investigated. The results showed that CMC could react with microsilica to form a SiC shell on the graphite surface at elevated temperature. Consequently, the SiO2 phase was totally converted into the SiC phase at above 1600°C. The microstructure of SiC coating on the graphite became denser with increasing temperature. Thermo-gravimetric curves revealed that the weight loss percent of graphite was about 97.3% while the value decreases to 29.78% when the SiC was formed. Differential scanning calorimetry analysis showed that the existence of SiC coating decreased the enthalpy of carbon oxidation reaction from 12.02 kJ/g to 1.14 kJ/g, confirming excellent oxidation resistance. At the same time, the water contact angle of graphite was about 78.5° while the core-shell structure of graphite@SiC reduced the wetting angle to 43°. The study of the formation mechanism of graphite@SiC showed that SiO2 could be reduced by CMC to SiO(g), which would be deposited on the graphite to form SiC coating.

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