2009 IEEE Energy Conversion Congress and Exposition 2009
DOI: 10.1109/ecce.2009.5316130
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Characterization of a new 4.5 kV press pack SPT+ IGBT for medium voltage converters

Abstract: Recently developed IGBT press pack devices have become a competition for IGCTs in high power industrial applications. This paper presents an overview of state-of-theart medium voltage power semiconductors with active turn-off capability. A new 85 mm, 4.5 kV, 1.2 kA press pack SPT+ IGBT and the corresponding freewheeling diode are characterized at hard switching as a function of the parameters dc-link voltage, load current, junction temperature, stray inductance and gate unit conditions.

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Cited by 35 publications
(11 citation statements)
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“…As previously mentioned, in the first experiment, the IPM is characterized by using a double pulse testing [26] with the methodology introduced in [27]; the results of these tests are depicted in Figs. 14-19.…”
Section: Resultsmentioning
confidence: 99%
“…As previously mentioned, in the first experiment, the IPM is characterized by using a double pulse testing [26] with the methodology introduced in [27]; the results of these tests are depicted in Figs. 14-19.…”
Section: Resultsmentioning
confidence: 99%
“…The switching energy losses depend on IGBT/diode current I C /I F and voltage V CE /V KA as well as stray inductance L σ of the IGBT/diode commutation path, IGBT gate resistance R G , and junction temperature T j [8] as given in (1) for turn-on loss. Besides, the conduction power losses depend on I C /I F and T j as given in (2) for IGBT.…”
Section: Power Loss Modelingmentioning
confidence: 99%
“…For diode dynamic test, the load inductance Lload position was switched to the lower pair of IGBTs. In this case (for extracting diode losses), the top pair of IGBTs behave as a DUT and bottom pair of IGBT modules goes in the passive mode (i.e., at VGE of -5.0 V and under turn off condition) [8]- [10]. The copper busbar connections from the DC-link capacitor to the DUT in the entire circuit give an approximate stray inductance of 100 nH.…”
Section: Semiconductor Data and Test Setupmentioning
confidence: 99%