Characterization of 3D and planar Si diodes with different neutron converter materials

Mendicino, R.; Boscardin, M.; Carturan, S.; Betta, G.-F. Dalla; Palma, Matteo Dalla; Maggioni, G.; Quaranta, A.; Ronchin, S.

doi:10.1016/j.nima.2015.04.026

Cited by 11 publications

(5 citation statements)

References 18 publications

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“…Similarly, Mendicino et al [20] have performed GEANT4 simulation on 10 B and 10 B 4 C converter material for 2-D (two dimensional) planar configuration design. They reported an obtained simulated efficiency value of 1.3% for 10 B and 1.8% for 10 B 4 C converter material.…”

Section: Comparisons and Discussionmentioning

confidence: 99%

“…Again, in comparison to our present simulation results, these values are quite low. The reason for such low efficiency in their studies was the thickness of converter material which was kept at 500 nm for 10 B and 1000 nm for 10 B 4 C [20]. Such low value of thickness decreases the probability of neutron interaction hence resulting in lower efficiency of Boron Carbide ( 10 B 4 C) based converter material detector in their GEANT4 simulation studies.…”

Section: Comparisons and Discussionmentioning

confidence: 99%

“…Hence, there is a need to look for alternative variants of 10 B converter material or its compound. One such 10 B based compound is Boron Carbide ( 10 B 4 C) which uses ortho-carborane for coating which is non toxic in nature [17,18] and it has also been utilized as a converter material by various research groups around the globe [19][20][21].…”

Section: Introductionmentioning

confidence: 99%

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Investigation of thermal neutron detection efficiency of Boron Carbide converter material using GEANT4 simulation for different types of detector configurations

et al. 2022

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A lot of advancement in the field of semiconductors has made it possible to design a solid state neutron detector. They are small in size and compact, have economical bulk fabrications, require low power for their operation. Hence it can act as a plausible alternative to traditional neutron detector such as gas filled and scintillation detectors. It has been observed that many factors like the choice of converter material, LLD settings and geometrical configurations have an impact on the thermal neutron detection efficiency of solid state neutron detector design. Therefore in the present research work, a systematic GEANT4 simulation have been performed on estimating the simulated thermal neutron detection efficiency (η) for five different solid state detector geometrical configurations design with Boron Carbide (10B4C) as a converter material. These detectors geometry configurations designs are planar, rectangular parallel trenches, cylindrical perforation, stack and spherical (single and multi-layer). The objective of the simulations was to obtain critical geometrical features for which the efficiency reaches the maximum value, of the given detector configurations. The influence of the different enrichment levels of 10B (20% to 80%) in Boron Carbide and different Low-Level Discriminator (LLD) value setting (from 100 keV to 700 keV) on the simulated thermal neutron detection efficiency was also investigated. Finally, the simulated multi channel analyzer spectra or in other words histoplots were obtained for all the detector configurations.

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Section: Comparisons and Discussionmentioning

confidence: 99%

Section: Comparisons and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Investigation of thermal neutron detection efficiency of Boron Carbide converter material using GEANT4 simulation for different types of detector configurations

et al. 2022

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“…The first HYDE batch had the purpose to create a geometry that could be easily filled with different converter materials: Polysiloxane (for fast neutrons), 10 B 4 C, 6 LiF and 10 B (for thermal neutrons). The electrical and functional characterization have been reported in detail in [26][27] [28], also in comparison to test results from planar sensors and Geant4 simulations. In the remaining part of this paper we will focus on the new detector we have designed: the geometry and technology will be described, and selected results from Geant4 and TCAD simulations will be reported.…”

Section: Pos(vertex2015)027mentioning

confidence: 99%

Semiconductor neutron detectors

et al. 2016

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Semiconductor neutron detectors are attracting increasing interest in many application fields, due to the shortage and high cost of 3 He gas which represented for decades the most important solution to neutron detection. The most interesting devices consist of silicon sensors featuring high aspect-ratio cavities filled with neutron converter materials (typically based on 10 B or 6 Li). Very good results have so far been obtained by different research groups in Europe, but most of all in the USA, with efficiency values up to 50% using only a single detector layer. In this paper, the state of the art in semiconductor neutron detectors will be reviewed, with emphasis on silicon based devices. Moreover, recent results from the R&D activity carried out in the framework of the INFN HYDE (HYbrid DEtector for neutrons) Project will be reported, covering design and technological aspects, as well as simulation results relevant to a new pixel sensor structure, aimed at high detection efficiency while minimizing the process complexity.

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“…The first fabrication run had the main purpose to investigate the critical steps of this technology and to tune the device simulations against the experimental results. For these reasons the geometries were not optimized for efficiency but were rather chosen to ease the filling of cavities with different converter materials [14]. On the contrary, the second run had the purpose to solve all the problems observed with the first production [15] and to increase the detection efficiency [16].…”

Section: Introductionmentioning

confidence: 99%

Initial results from new 3D neutron detectors

et al. 2016

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In this paper we report the initial results from our second generation of 3D silicon detectors for neutrons. The devices are briefly described and the first functional characterization tests carried out in laboratory before coupling to neutron converter material are reported. Particular emphasis is given to the read-out system used for the suppression of signals induced by γ-rays, that is one of the main issues in neutron detection. Experimental results are discussed with the aid of TCAD simulations. K: Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc); Hybrid detectors; Solid state detectors 1Corresponding author.

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Characterization of 3D and planar Si diodes with different neutron converter materials

Cited by 11 publications

References 18 publications

Investigation of thermal neutron detection efficiency of Boron Carbide converter material using GEANT4 simulation for different types of detector configurations

Investigation of thermal neutron detection efficiency of Boron Carbide converter material using GEANT4 simulation for different types of detector configurations

Semiconductor neutron detectors

Initial results from new 3D neutron detectors

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