Characterization of 3C-SiC by Spectroscopic Ellipsometry

Jansson, Roger; Zangooie, S.; Arwin, Hans; Järrendahl, Kenneth

doi:10.1002/(sici)1521-3951(200003)218:1<r1::aid-pssb99991>3.0.co;2-0

Cited by 8 publications

(3 citation statements)

References 3 publications

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“…The Lorentz-Drude parameters obtained for the Pd and ␤-PdH x are given in Table I. The third Lorentz oscillator term is a zero-width pole which takes higher energy bands into account 15 and in the fitting the 3 and ⌫ 3 values were fixed to be 11 and 0 eV, respectively. Figure 3 shows the estimated spectra of refractive index n and extinction coefficient for the Pd and ␤-PdH x films.…”

Section: Resultsmentioning

confidence: 99%

Real time characterization of hydrogenation mechanism of palladium thin films by in situ spectroscopic ellipsometry

Yamada

Tajima

Bao

et al. 2009

Journal of Applied Physics

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The hydrogenation mechanism of Pd thin films was analyzed in real time by measuring the variation in ellipsometric Ψ and Δ using in situ spectroscopic ellipsometry. In the initial stage, the hydrogenation proceeded from the film surface and a mixture layer of metal and hydride, not a uniform hydride layer, was formed at the surface. With time evolution, the thickness of the mixture layer increased and that of the Pd metal layer decreased rapidly. After the whole Pd metal layer changed to the mixture layer, the concentration of hydride in the mixture layer increased. Finally, the concentration reached one and hydrogenation of Pd was finished.

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Section: Resultsmentioning

confidence: 99%

Real time characterization of hydrogenation mechanism of palladium thin films by in situ spectroscopic ellipsometry

Yamada

Tajima

Bao

et al. 2009

Journal of Applied Physics

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“…The second layer is the SiC epilayer, where the optical constants of 3C-SiC in literature were used as default values for model fitting. 15) The top layer, which is assumed to be a 50/50 mixture of the SiC epilayer and void (air), describes the surface roughness of the samples. The optical constants for the roughness layer and intermixed layer are calculated by Bruggeman effective medium approximation (EMA).…”

Section: Model Analysismentioning

confidence: 99%

“…[9][10][11] Spectroscopic ellipsometry is widely used to determine the optical constants and layer structure of 3C-SiC films on Si substrates. [12][13][14][15] However, few reports on the dielectric function of 3C-SiC grown using organosilane sources have been given. 16) In this paper, we report on the characterization of SiC films grown on Si(111) using organosilane sources by spectroscopic ellipsometry in the photon energy range of 0.73 to 6.43 eV, and the obtained spectra were compared with those of the epitaxial layers of 3C-SiC on Si(001) substrates grown using Si 2 H 6 .…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic Ellipsometry of 3C-SiC Thin Films Grown on Si Substrates Using Organosilane Sources

Kubo¹,

Moritani²,

Kitahara³

et al. 2005

Jpn. J. Appl. Phys.

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We report on the theoretical investigation of how geometrically uniform highly doped silicon nanowires can break up into a series of islands that exhibit Coulomb blockade. By using a newly developed numerical simulation in which random ionized dopants are introduced explicitly and the electron distribution is calculated self-consistently under the Thomas-Fermi approximation, we demonstrate natural formation of electron islands in the nanowires owing to the random dopant potential. We study the quasi-one-dimensional nature of the electron islands formed in the nanowires. The offset charge effects on the current threshold of the nanowire transistors are then investigated by feeding the derived structural parameters such as inter-island capacitance and tunnel resistance into a Monte Carlo single electron transport simulator. We show that the overall threshold voltage distribution can roughly be described as a two-'macro'-island system despite a complex series of multiple electron islands.

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Electronic Properties of Intrinsic and Heavily Doped 3C–, nH–SiC (n = 2, 4, 6) and III-N (III = B, Al, Ga, In)

Persson¹,

Silva²

2005

Optoelectronic Devices: III Nitrides

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Characterization of 3C-SiC by Spectroscopic Ellipsometry

Cited by 8 publications

References 3 publications

Real time characterization of hydrogenation mechanism of palladium thin films by in situ spectroscopic ellipsometry

Real time characterization of hydrogenation mechanism of palladium thin films by in situ spectroscopic ellipsometry

Spectroscopic Ellipsometry of 3C-SiC Thin Films Grown on Si Substrates Using Organosilane Sources

Electronic Properties of Intrinsic and Heavily Doped 3C–, nH–SiC (n = 2, 4, 6) and III-N (III = B, Al, Ga, In)

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