Characterization of 14 nm Silicon Integrated Circuits with 1.55–2 μm Emission Microscopy—A Case Study

Abstract

We describe here the first demonstration of 14nm silicon device characterization using 1.55-2µm emission microscopy as a technique to interrogate the radiative properties of various physical defects. A study is presented and discussed for cases highlighting photo-emission only, hybrid photo-thermal-emission, and thermal-emission only.