Characterization of 1,4-/1,8-dihydroxy-9,10-anthraquinone films

Mahajan, Aman; Singh, Akash Ranjan; Kumar, Rajesh; Bedi, R. K.; Pramila,; Kumar, Subodh

doi:10.1016/s0040-6090(00)01897-6

Cited by 5 publications

(1 citation statement)

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“…Such properties of some anthraquinone-derived compounds have already been reported. [14][15][16] In this study, the structural, electrical and optical properties of 1,8-bis(3-hydroxypropylamino)-9,10-anthraquinone (1) and 1-(3-hydroxypropyamino)-9,10-anthraquinone (2) (Fig. 1) films have been investigated using films prepared by thermal evaporation onto glass substrates maintained at different temperatures at a pressure of $1:33 Â 10 À3 Pa.…”

Section: Introductionmentioning

confidence: 99%

Structural and Electrical Properties of 1,8-Bis(3-hydroxypropylamino) and 1-(3-Hydroxypropylamino)–9,10-anthraquinone Films

Bedi

Bhatia

Kaur

et al. 2008

jjap

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The method of computer aided vacancy migration analysis has been developed to predict the stress induced voiding (SiV) reliability. In this method, distribution of hydrostatic stress was calculated by the finite element analysis (FEA), and vacancy concentration distribution was calculated by the finite difference analysis (FDA). In this paper, SiV acceleration tests were conducted in various widths of Cu lines in organic ultralow-k dielectric (Cu/Ta/ULK/SiCN) or silicon oxide dielectric (Cu/Ta/SiO 2 /SiCN) and these results were compared with the results of the vacancy migration analyses. The number of SiV failures increased in the line with width of 0.35 m for Cu/Ta/SiO 2 /SiCN interconnects and 0.20 m for Cu/Ta/ULK/SiCN interconnects, respectively, under SiV acceleration tests. The results obtained by vacancy migration analysis show similar behavior as the results of SiV acceleration tests. These results reveal that the vacancy migration analysis is useful to predict reliability of interconnects. #

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Section: Introductionmentioning

confidence: 99%