Characterization and reliability of III-V gate-all-around MOSFETs

Abstract

InGaAs is a promising channel material for high performance CMOS logic circuits due to its large electron injection velocity. InGaAs Gate-All-Around (GAA) MOSFETs have been demonstrated; these transistors offer large drive current and excellent immunity to short channel effects (SCE). However, the characterization and reliability of InGaAs GAA MOSFETs are still challenging. In this paper, we (i) discuss the challenges and new characterization methodologies to evaluate D it , R sd and other parameters on short channel InGaAs GAA MOSFETs, (ii) discuss device characterization based on low frequency noise and RTN, (iii) image the complexity of heat dissipation by using newly developed thermoreflectance method, and (iv) review the current research on 3D InGaAs MOSFET reliability including PBTI, HCI, and gate dielectric breakdown.

Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs With Improved Subthreshold Characteristics and Device Reliability

“…S the technology nodes down scaling to the sub-10 nm, suppressing short channel effects (SCEs) has become a strict challenge to overcome the serious threshold voltage (Vth) roll-off, stronger drain induced barrier lowering (DIBL), and drastic subthreshold swing (SS) degradation [1]. To address these issues, gate-all-around (GAA) field-effect transistor has been proposed, and has shown resistant to SCEs [2][3][4][5][6][7]. However, for the Ⅲ-Ⅴ based transistors, severe subthreshold performance degradation is a crucial issue correlated to the strong band to band tunneling (BTBT) of the small bandgap material and a considerable number of traps generated at the high-κ and semiconductor interface which accounted for trap-assisted tunneling (TAT) and Frenkel-Poole emission in scaled gate oxide [8][9][10][11].…”