Characterization and production metrology of thin transistor gate oxide films

Diebold, Alain C.; Venables, D.; Chabal, Yves J.; Muller, David A.; Weldon, M. K.; Garfunkel, Eric

doi:10.1016/s1369-8001(99)00009-8

Cited by 57 publications

(41 citation statements)

References 70 publications

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“…The observed trap energy at 2.8 eV is between the values calculated for α-quartz (2.5 eV) and a-SiO 2 (3.2 eV). Our results indicate that the geometry of the oxide structure can significantly affect the position of the defect level, and the discrepancy between the experimental value and our a-SiO 2 value may reflect the higher oxide density in thermally grown oxides 58,59 rather than the density obtained in this work.…”

Section: Discussioncontrasting

confidence: 78%

Nature of intrinsic and extrinsic electron trapping in SiO2

et al. 2014

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Using ab initio calculations we demonstrate that extra electrons in pure amorphous SiO2 can be trapped in deep band gap states. Classical potentials were used to generate amorphous silica models and density functional theory to characterize the geometrical and electronic structures of trapped electrons. Extra electrons can trap spontaneously on pre-existing structural precursors in amorphous SiO2 and produce ≈ 3.2 eV deep states in the band gap. These precursors comprise wide (≥132 • ) O-Si-O angles and elongated Si-O bonds at the tails of corresponding distributions. The electron trapping in amorphous silica structure results in an opening of the O-Si-O angle (up to almost 180 • ). We estimate the concentration of these electron trapping sites to be ≈ 4 × 10 19 cm −3 . The structure of these centers is similar to that of Ge and Li electron centers in α-quartz.

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Section: Discussioncontrasting

confidence: 78%

Nature of intrinsic and extrinsic electron trapping in SiO2

et al. 2014

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“…Although three different TEM imaging modes have been used in the characterization of thin oxide films (Diebold et al, 1999;Muller,1999Muller& Neaton 2001) only two of these provide silicon crystal lattice information that can be used as an internal calibration, HR-TEM and ADF-STEM. ADF STEM is also known as Z-contrast microscopy.…”

Section: Comparison Of Hr-tem and Adf-stemmentioning

confidence: 99%

Thin Dielectric Film Thickness Determination by Advanced Transmission Electron Microscopy

Diebold¹,

Foran²,

Kisielowski

et al. 2003

Microsc Microanal

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High Resolution Transmission Electron Microscopy (HR-TEM) has been usedas the ultimate method of thickness measurement for thin films. The appearance of phase contrast interference patterns in HR-TEM images has long been confused as the appearance of a crystal lattice by non-specialists. Relatively easy to interpret crystal lattice images are now directly observed with the introduction of annular dark field detectors for scanning TEM (STEM). With the recent development of reliable lattice image processing software that creates crystal structure images from phase contrast data, HR-TEM can also provide crystal lattice images. The resolution of both methods was steadily improved reaching now into the sub Angstrom region. Improvements in electron lens and image analysis software are increasing the spatial resolution of both methods.Optimum resolution for STEM requires that the probe beam be highly localized. In STEM, beam localization is enhanced by selection of the correct aperture. When STEM measurement is done using a highly localized probe beam, HR-TEM and STEM measurement of the thickness of silicon oxynitride films agree within experimental error.In this paper, the optimum conditions for HR-TEM and STEM measurement are discussed along with a method for repeatable film thickness determination. The impact of sample thickness is also discussed. The key result in this paper is the proposal of a reproducible method for film thickness determination.

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“…[17][18][19] It is identified as a silicon atom with a dangling bond [Si (3)]. 15,[20][21][22] The presence of this defect is easily identified with the EPR spectroscopy.…”

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confidence: 99%

Structure, defects, and strain in silicon-silicon oxide interfaces

Kovačević¹,

Pivac²

2014

Journal of Applied Physics

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ABSTRACT:The structure of the interfaces between silicon and silicon-oxide are responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to theirs failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom or displaced oxygen atom. Three-coordinated oxygen atom can be 2 created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (Pb defect) depend on the charge as well as on the electric field across the interface. The negatively charged Pb defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. Mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab-initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

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Characterization and production metrology of thin transistor gate oxide films

Cited by 57 publications

References 70 publications

Nature of intrinsic and extrinsic electron trapping in SiO2

Nature of intrinsic and extrinsic electron trapping in SiO2

Thin Dielectric Film Thickness Determination by Advanced Transmission Electron Microscopy

Structure, defects, and strain in silicon-silicon oxide interfaces

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