Characterization and Modeling of Wire Bond Interconnects up to 100 GHz

Jahn, Danny; Reuter, Ralf; Yin, Yongsheng; Feige, Jorg

doi:10.1109/csics.2006.319915

Cited by 24 publications

(4 citation statements)

References 4 publications

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“…Figure 6 shows the schematic of wire bonding between MMIC and PCB traces with the equivalent circuit model of wire bonds at millimeter-wave frequencies. Based on the modeling approach proposed in, 18 the corresponding parasitic parameters of the ribbon bonding adopted as the interconnection between the MMICs and the traces on the RO3010 printed-circuit-board (PCB) are extracted. The equations for the parasitic parameters of the ball and ribbon bonds are expressed as Equations ( 1)- (6).…”

Section: Integration Of the Antenna Switch Modulementioning

confidence: 99%

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A dual‐band polarization switchable antenna switch module for 5G new‐radio applications

Tsao,

Hsu

2023

Circuit Theory & Apps

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SummaryIn this paper, a dual‐band antenna switch module with switching capability targeting the inter‐band carrier aggregation at 5G new‐radio (NR) frequency range 2 (FR2) is presented. Inter‐band carrier aggregation has become increasingly prevalent in millimeter‐wave applications at Ka‐band frequencies as a means to secure sufficient bandwidth for improving the rate of data transmission. Antenna modules with polarization switching capability are considered as a critical component for maintaining proper transmission and reception of the signals at millimeter‐wave frequencies. The integrated system consists of a wideband single‐pole‐double‐throw (SPDT) switch and a dual‐band power amplifier (PA) that are realized on the Rogers RO3010 substrate. With the two double exponentially tapered slot antennas (DETSA) arranged in the mutually orthogonal configuration, the antenna switch module can provide linear polarization at ±45 degrees. A measured error‐vector‐magnitude (EVM) of −30.3 dB at 38 GHz using 200‐MHz standard 5G NR 256‐QAM orthogonal frequency‐division multiplexing (OFDM) modulation has demonstrated the feasibility of the proposed module to be implemented for millimeter‐wave applications.

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Section: Integration Of the Antenna Switch Modulementioning

confidence: 99%

“…I G U R E 6 (A) Schematic of wire bonding and (B) equivalent circuit model of wire bonds 18. F I G U R E 7 Integrated antenna switch module on Rogers RO3010 substrate.…”

mentioning

confidence: 99%

A dual‐band polarization switchable antenna switch module for 5G new‐radio applications

Tsao,

Hsu

2023

Circuit Theory & Apps

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“…The combination of the K-connector, the microstrip line, and the bonding wire has been accurately modelled through an EM simulation (HFSS TM ) to make sure that their impact on the antenna performances is negligible. Accurate and simple bonding wire models have been extensively studied and reported up to 100 GHz [37] and [38], and previous works have demonstrated antennas connected through bonding wires performing quite well at 60 GHz [39], [40]. In [40], for example, a CPW and a bonding wire are used (even preferable) between the antenna and the probes in order to avoid the impact of probe tips on the antenna at 67 GHz.…”

Section: Antenna Measurementsmentioning

confidence: 99%

On-Chip Dual-Band Rectangular Slot Antenna for Single-Chip Millimeter-Wave Identification Tag in Standard CMOS Technology

Burasa¹,

Djerafi²,

Constantin³

et al. 2017

IEEE Trans. Antennas Propagat.

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“…In parallel with the Schottky junction is the finger-to-pad capacitance component C p , which represents the capacitance between the anode contact finger and the underlying active GaAs. A set of simple lumped elements models parts inside and outside the diode: an ideal inductance L 2 in series with resistor R represents the wire inductance and losses due to the metallization and wire bonding, as well as radiation losses at the wire bends [24,25]. The two shunt capacitances close to the input and output ports (C 1 , C 2 ) represent the substrate capacitance between the microstrip lines onto which the wire is bonded.…”

Section: Equivalent Circuit Model Of the Diode (Lumped Elements: Intrmentioning

confidence: 99%

Characterization and Modeling of Schottky Diodes Up to 110 GHZ for Use in Both Flip-Chip and Wire-Bonded Assembled Environments

Zeljami¹,

Gutiérrez²,

Pascual³

et al. 2012

PIER

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Abstract-This paper presents a wideband model, from Direct Current (DC) to W band, for a single Anode Schottky Diode based on a commercial VDI chip. Different measurements have been performed to obtain a complete large-signal equivalent circuit model suitable for the device under consideration up to 110 GHz, and for its integration in planar circuits. The modeling has been done using a combination of DC measurements, capacitance measurements, and RF scattering measurements. The test structure for on-wafer Sparameter characterization has been developed to obtain an equivalent circuit for Coplanar to Microstrip (CPW-Microstrip) transitions, then verified with 3D Electromagnetic (EM) tools and finally used to deembed device measurements from empirical data results in W band. 3D EM simulation of the diodes was used to initialize the parasitic parameters. Those significant extrinsic elements were combined with the intrinsic elements. The results show that the proposed method is suitable to determine parameters of the diode model with an excellent fit with measurements. Using this model, the simulated performance for a number of diode structures has given accurate predictions up to 110 GHz. Some anomalous phenomena such as parasitic resistance dependence on frequency have been found.

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Characterization and Modeling of Wire Bond Interconnects up to 100 GHz

Cited by 24 publications

References 4 publications

A dual‐band polarization switchable antenna switch module for 5G new‐radio applications

A dual‐band polarization switchable antenna switch module for 5G new‐radio applications

On-Chip Dual-Band Rectangular Slot Antenna for Single-Chip Millimeter-Wave Identification Tag in Standard CMOS Technology

Characterization and Modeling of Schottky Diodes Up to 110 GHZ for Use in Both Flip-Chip and Wire-Bonded Assembled Environments

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