Abstract:Summary
Tunnel field effect transistors are used for ultra‐low power application since it is challenging to operate CMOS at very low supply voltage. As tunnel field effect transistor has a very low subthreshold slope due to band to band tunneling (BTBT) mechanism, it has the potential to operate at very low operating voltage. It is necessary that the devices utilized in implantable bio‐medical applications and Internet of Everything (IoE) need to consume very low power. This work presents an analysis of Dual M… Show more
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