Characterization and Modeling of CdS/CdTe Heterojunction Thin-Film Solar Cell for High Efficiency Performance

Fardi, Hamid; Buny, Fatima

doi:10.1155/2013/576952

Cited by 27 publications

(14 citation statements)

References 32 publications

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“…A thin layer of BSR causes the depletion region of the Schottky barrier contact to be narrow, where majority holes carriers can tunnel through minimizing the loss. This layer may also add an additional absorption layer to the structure, which will increase the photogenerated carriers [17]. The BSR material has great influence in -characteristics of the cell, as shown in Figure 5.…”

Section: Proposed Ultrathin Structure For High Conversionmentioning

confidence: 99%

New Architecture towards Ultrathin CdTe Solar Cells for High Conversion Efficiency

Ngoupo

Ouédraogo

Zougmoré

et al. 2015

International Journal of Photoenergy

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Solar Cell Capacitance Simulator in 1 Dimension (SCAPS-1D) is used to investigate the possibility of realizing ultrathin CdTe based solar cells with high and stable conversion efficiency. In the first step, we modified the conventional cell structure by substituting the CdS window layer with a CdS:O film having a wide band gap ranging from 2.42 to 3.17 eV. Thereafter, we simulated the quantum efficiency, as well as the parameters ofJ-Vcharacteristics, and showed how the thickness of CdS:O layer influences output parameters of Glass/SnO2/ZTO/CdS:O/CdTe1-xSx/CdTe/Ni reference cell. High conversion efficiency of 17.30% has been found using CdTe1-xSx(x=0.12) and CdTe layers of thickness 15 nm and 4 μm, respectively. Secondly, we introduced a BSR layer between the absorber layer and back metal contact, which led to Glass/SnO2/ZTO/CdS:O/CdTe1-xSx/CdTe/BSR/Ni configuration. We found that a few nanometers (about 5 nm) of CdTe1-xSxlayer is sufficient to obtain high conversion efficiency. For BSR layer, different materials with large band gap, such as ZnTe, Cu2Te, and p+-CdTe, have been used in order to reduce minority carrier recombination at the back contact. When ZnTe is used, high conversion efficiency of 21.65% and better stability are obtained, compared to other BSR.

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Section: Proposed Ultrathin Structure For High Conversionmentioning

confidence: 99%

New Architecture towards Ultrathin CdTe Solar Cells for High Conversion Efficiency

Ngoupo

Ouédraogo

Zougmoré

et al. 2015

International Journal of Photoenergy

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“…This is because NbSe2 is considerably more electronegative than graphene, as evidence by their different workfunctions: Φ = 5.9 and 4.6 eV for NbSe2 and graphene [22,23], respectively. These values may be contrasted to the electron affinity (χ = 4.3eV) for CdTe [24]. Hence, the driving force for electron transfer from CdTe to NbSe2 is much greater than that to graphene, as having also being revealed by our Bader analysis.…”

mentioning

confidence: 57%

Enhanced van der Waals epitaxy via electron transfer enabled interfacial dative bond formation

Xie

Wang

et al. 2017

Phys. Rev. Materials

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Enhanced van der Waals (vdW) epitaxy of semiconductors on layered vdW substrate is identified as the formation of dative bonds. For example, despite that NbSe2 is a vdW layered material, firstprinciples calculations reveal that the bond strength at CdTe-NbSe2 interface is five times as large as that of vdW interaction at CdTe-graphene interface. The unconventional chemistry here is enabled by an effective net electron transfer from Cd dangling-bond states at CdTe surface to metallic non-bonding NbSe2 states, which is a necessary condition to activate the Cd for enhanced binding with Se.

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“…In this case, the CdTe absorber layer thickness was varied between 500 nm and 4000 nm. Thickness for the CdS layer Table 2 Parameters used in the calculations of the CdS/CdTe solar cell (Amin, Sopian, & Konagai, 2007;Amin, Tang, et al, 2007;Benmira & Aida, 2013;Busacca et al, 2014;Daza et al, 2017;Fardi & Buny, 2013;Kasap & Capper, 2006;Khosroabadi, Keshmiri, & Marjani, 2014;Slonopas et al, 2016;Touafek et al, 2012).…”

Section: Efficiency Of a Cds/cdte Solar Cellmentioning

confidence: 99%

Design of thin film solar cells based on a unified simple analytical model

Acevedo-Luna

Bernal-Correa

Montes-Monsalve

et al. 2017

Journal of Applied Research and Technology

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Polycrystalline thin film solar cells made with absorber materials such as CdTe, CIGS, CZTS and metalorganic halides (perovskites) are currently important alternatives for the silicon solar cell technology, which still dominates the photovoltaic market. Then, it is important to have tools which can be used to design this kind of solar cells. For this purpose, we have developed a unified simple analytical model that can be applied to thin film solar cells. The model is based on the basic physics of hetero-junction devices, but it takes into consideration that the space charge region can extend along the major part of the cell length, particularly for very thin cells, causing important effects that typically are not observed in conventional junction devices. Photo-generated carriers are collected by electric field-drift instead of diffusion, and simultaneously strong recombination at this region may dominate the electrical I-V characteristic of the cell. Since the space-charge region width varies with the applied voltage, the illumination current density and the saturation dark current density are no longer independent of the voltage as is assumed for conventional solar cells. When the model is applied to CIS and CdTe solar cells as examples, it is found that it is possible to design very thin film solar cells (absorber less than 1 m thick) with high efficiencies, whenever the recombination velocity at the back surface becomes small (10 2 cm/s), instead of the high recombination velocities present at ohmic contacts (10 7 cm/s). This fact implies the cost reduction of thin film solar cells by reducing absorber material thickness, and therefore it poses a challenge to develop deposition methods for very thin CdTe and CIGS absorber materials without pinholes, so that improved efficiencies are obtained when the surface recombination velocity is made small at the back by having a p+ or an electron blocking region before the ohmic contact. This result also explains the high efficiencies achieved by very thin perovskite solar cells.

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Characterization and Modeling of CdS/CdTe Heterojunction Thin-Film Solar Cell for High Efficiency Performance

Cited by 27 publications

References 32 publications

New Architecture towards Ultrathin CdTe Solar Cells for High Conversion Efficiency

New Architecture towards Ultrathin CdTe Solar Cells for High Conversion Efficiency

Enhanced van der Waals epitaxy via electron transfer enabled interfacial dative bond formation

Design of thin film solar cells based on a unified simple analytical model

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