Characterization and Modeling of a SiC MOSFET’s Turn-Off Overvoltage

Abstract

The overvoltage during hard switching limits the full utilization of devices due to higher blocking voltage requirement. The faster switching speed of SiC MOSFET worsens the trade-off, and the understanding of the overvoltage’s mechanism is crucial for the better utilization. In this paper, experimental characterizations on the influence of circuit parasitic parameters and gate resistances on overvoltage are performed. Furthermore, a SPICE-based device behavioral model is built and found to able to accurately predict the overvoltage. The same method could be applied to device rating selection in converter design.

A Novel Gate Drive Circuit for Suppressing Turn-on Oscillation of Non-Kelvin Packaged SiC MOSFET

“…[1][2][3][4][5][6], which can improve the operational performance of power converters. Due to the good switching characteristics and low switching losses of the SiC MOSFET, the switching frequency of power electronic converters based on a SiC MOSFET has reached MHz, and their power density and efficiency have been greatly improved [7][8][9][10]. When the SiC MOSFET works under high-frequency conditions, the switching loss is the main loss in a SiC MOSFET [11][12][13][14][15][16].…”