Characterization and Modeling of a Pt-In2O3 Resistive Sensor for Hydrogen Detection at Room Temperature

Abstract

Sensitive H2 sensors at low concentrations and room temperature are desired for the early warning and control of hydrogen leakage. In this paper, a resistive sensor based on Pt-doped In2O3 nanoparticles was fabricated using inkjet printing process. The H2 sensing performance of the sensor was evaluated at low concentrations below 1% at room temperature. It exhibited a relative high response of 42.34% to 0.6% H2. As the relative humidity of 0.5% H2 decreased from 34% to 23%, the response decreased slightly from 34% to 23%. The sensing principle and the humidity effect were discussed. A dynamic current sensing model for dry H2 detection was proposed based on Wolkenstein theory and experimentally verified to be able to predict the sensing behavior of the sensor. The H2 concentration can be calculated within a short measurement time using the model without waiting for the saturation of the response, which significantly reduces the sensing and recovery time of the sensor. The sensor is expected to be a promising candidate for room-temperature H2 detection, and the proposed model could be very helpful in promoting the application of the sensor for real-time H2 leakage monitoring.

Room-Temperature Hydrogen Sensitive Pt-SnO2 Composite Nanoceramics: A Comparison Study on Two Different Pt Loading Methods

“…As shown in Figure 4, the sample prepared using the impregnation method has a response of 65 to 1% H2-20% O2-N2 at room temperature. Generally speaking, such a room temperature response to H2 is actually quite outstanding among those reported for low-dimensional MOSs in the literature [35][36][37]. However, as the H2 concentration is reduced to 0.0625%, it shows no response.…”

Room-Temperature Hydrogen-Sensitive Pt-SnO2 Composite Nanoceramics: Contrasting Roles of Pt Nano-Catalysts Loaded via Two Different Methods

“…As shown in Figure 4, the sample prepared using the impregnation method has a response of 65 to 1% H2-20% O2-N2 at room temperature. Generally speaking, such a room-temperature response to H2 is quite outstanding among those reported for low-dimensional MOSs in the literature [32][33][34]. However, as the H2 concentration is reduced to 0.0625%, it gives no response.…”