Characterization and integration of a CVD porous SiOCH (k&lt;2.5) with enhanced mechanical properties for 65 nm CMOS interconnects and below

Chapelon, L.L.; Arnal, V.; Broekaart, M.; Gosset, L.G.; Vitiello, J.; Torrès, J.

doi:10.1016/j.mee.2004.07.012

Cited by 33 publications

(19 citation statements)

References 4 publications

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“…Using the second approach, postdeposition processes were used to create pores in SiCOH films. A dense SiCOH film containing Si-CH 3 groups was plasma treated at 400 • C followed by exposure to a hydrogen plasma to modify the organosilane network (76). The plasma treatment converted the Si-CH 3 groups to Si-H without network collapse, thus leaving excess free volume in the film.…”

Section: Porous Dielectricsmentioning

confidence: 99%

Low–Dielectric Constant Insulators for Future Integrated Circuits and Packages

Kohl

2011

Annu. Rev. Chem. Biomol. Eng.

111

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Future integrated circuits and packages will require extraordinary dielectric materials for interconnects to allow transistor advances to be translated into system-level advances. Exceedingly low-permittivity and low-loss materials are required at every level of the electronic system, from chip-level insulators to packages and printed wiring boards. In this review, the requirements and goals for future insulators are discussed followed by a summary of current state-of-the-art materials and technical approaches. Much work needs to be done for insulating materials and structures to meet future needs.

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Section: Porous Dielectricsmentioning

confidence: 99%

Low–Dielectric Constant Insulators for Future Integrated Circuits and Packages

Kohl

2011

Annu. Rev. Chem. Biomol. Eng.

111

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“…5 Hydrogen plasmas have also been used to cure porous SiCOH films. A hydrogen plasma treatment at 400°C was used for introducing porosity in a SiCOH-type film prepared by PECVD, 6 while it was shown elsewhere that hydrogen plasma can cure porous MSQ at temperatures as low as 250°C. 7 We found that a long exposure of as-deposited SiCOH films to hydrogen plasmas at temperatures below 200°C did not remove the porogen.…”

Section: Introductionmentioning

confidence: 99%

Hydrogen plasma effects on ultralow-k porous SiCOH dielectrics

Grill

Sternhagen

Neumayer

et al. 2005

Journal of Applied Physics

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This study investigated the interactions of hydrogen plasmas with ultralow-k porous SiCOH (pSiCOH) films and their dependency on the values of the original dielectric constant, porogen used for the preparation of films, and substrate temperature during the plasma treatment. pSiCOH films of similar dielectric constants have been prepared by plasma-enhanced chemical-vapor deposition using an identical SiCOH skeleton precursor, but with two different organic porogens. The films exposed to the hydrogen plasmas have been characterized by optical techniques, shrinkage characterization, and electrical measurements. It was found that the hydrogen plasma modifies the structure of pSiCOH’s oxide skeleton and reduces the concentration of the Si–(CH3)1 bonds, resulting in an increase of the dielectric constant. The degree of modification, for films prepared from the same precursors, is larger for films with lower dielectric constants (k) and is affected by the porogen used to prepare films with similar k values.

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“…Any further reduction of the k value would require introducing a pore structure into the dielectric material. Such pore structures can be obtained by either constitutive or subtractive methods [23][24][25]. Constitutive porosity, according to the International Union of Pure and Applied Chemistry (IUPAC) nomenclature, refers to pores created during deposition of an ILD without any post-fabrication treatment, and the pore structure depends on the original, as-deposited arrangement.…”

Section: Porous Organo-silicon Materialsmentioning

confidence: 99%

The Evolution of Organosilicon Precursors for Low-k Interlayer Dielectric Fabrication Driven by Integration Challenges

et al. 2021

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Since the application of silicon materials in electronic devices in the 1950s, microprocessors are continuously getting smaller, faster, smarter, and larger in data storage capacity. One important factor that makes progress possible is decreasing the dielectric constant of the insulating layer within the integrated circuit (IC). Nevertheless, the evolution of interlayer dielectrics (ILDs) is not driven by a single factor. At first, the objective was to reduce the dielectric constant (k). Reduction of the dielectric constant of a material can be accomplished by selecting chemical bonds with low polarizability and introducing porosity. Moving from silicon dioxide, silsesquioxane-based materials, and silica-based materials to porous silica materials, the industry has been able to reduce the ILDs’ dielectric constant from 4.5 to as low as 1.5. However, porous ILDs are mechanically weak, thermally unstable, and poorly compatible with other materials, which gives them the tendency to absorb chemicals, moisture, etc. All these features create many challenges for the integration of IC during the dual-damascene process, with plasma-induced damage (PID) being the most devastating one. Since the discovery of porous materials, the industry has shifted its focus from decreasing ILDs’ dielectric constant to overcoming these integration challenges. More supplementary precursors (such as Si-C-Si structured compounds), deposition processes (such as NH3 plasma treatment), and post porosity plasma protection treatment (P4) were invented to solve integration-related challenges. Herein, we present the evolution of interlayer dielectric materials driven by the following three aspects, classification of dielectric materials, deposition methods, and key issues encountered and solved during the integration phase. We aim to provide a brief overview of the development of low-k dielectric materials over the past few decades.

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Characterization and integration of a CVD porous SiOCH (k<2.5) with enhanced mechanical properties for 65 nm CMOS interconnects and below

Cited by 33 publications

References 4 publications

Low–Dielectric Constant Insulators for Future Integrated Circuits and Packages

Low–Dielectric Constant Insulators for Future Integrated Circuits and Packages

Hydrogen plasma effects on ultralow-k porous SiCOH dielectrics

The Evolution of Organosilicon Precursors for Low-k Interlayer Dielectric Fabrication Driven by Integration Challenges

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