Characterization and Comparison of High Blocking Voltage IGBTs and IEGTs Under Hard- and Soft-Switching Conditions

Fujii, Kansuke; Koellensperger, Peter; Doncker, Rik W. De

doi:10.1109/tpel.2007.911771

Cited by 54 publications

(13 citation statements)

References 9 publications

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“…The simulations of LLC and LCC converters include the IGBT loss reduction during the turn-off with the snubber capacitors. Since reductions in the IGBT turn-off power loss by help of capacitive snubbers have been reported to be lower than expected due to increased current tail duration and could vary between different IGBTs, the approximate average reduction of 50% [14][15][16][17] is considered in this paper. It should be mentioned that in real converters, the power losses could be distinctly higher than the simulated values due to additional power dissipation of passive components and the output rectifier.…”

Section: Simulation Results and Loss Comparisonmentioning

confidence: 99%

On Implementation Possibilities of High-Voltage IGBTs in Resonant Converters

Blinov

Vinnikov

2012

Technological Innovation for Value Creation

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Abstract. The conventional hard switching half-bridge topology used as a rolling stock auxiliary power supply unit has limited switching frequency due to high power losses in semiconductors. The study analyses LLC and LCC topologies in attempt to improve the performance of the converter and presents a simulation of the operation and an estimation of power losses.Keywords: resonant converter, half bridge, power losses. IntroductionAlong with the development of 6.5 kV IGBT modules, complex applications managed by series connection of numerous lower voltage semiconductors could be simplified by replacing them with a single 6.5 kV module, which would enable simple and reliable two-level half-bridge (HB) voltage-source inverter (VSI) topologies to be implemented for the rolling stock auxiliary power units. This research focuses on an experimental half-bridge converter recently developed at Tallinn University of Technology. This converter is based on two Infineon 200 A 6.5 kV IGBT modules (FZ200R65KF1). Investigations have shown that the experimental converter is capable of providing required performance within the whole range of rolling stock supply voltage of 2.2…4.0 kV and a wide power range -10…50 kW [1]. The converter consists of primary and secondary parts galvanically isolated by the high frequency transformer. The primary part is a square-wave twolevel half-bridge PWM inverter and the secondary part consists of a full-bridge rectifier and an LC filter. Such converters (Fig. 1a) are very simple in control and protection, have reduced component count and provide good reliability.Main concerns of this topology relate to parasitic oscillations after IGBT turn-off (Fig. 1b) [2], high power losses in semiconductors due to hard switching and consequently, limited switching frequency (around 2 kHz) because of thermal issues. This imposes increased requirements on the passive components of the converter and associated cooling system. As a result this leads to increased price and reduced power density of the converter. Several ways exist of how to improve the switching process of semiconductor switches in the HB inverters, which can be classified as asymmetrical, auxiliary switch, and resonant converters [3].This however, requires increased number of components including controlled switches. Due to increased complexity the reliability is expected to be decreasing.

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Section: Simulation Results and Loss Comparisonmentioning

confidence: 99%

On Implementation Possibilities of High-Voltage IGBTs in Resonant Converters

Blinov

Vinnikov

2012

Technological Innovation for Value Creation

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“…If C 1 and C 2 are determined from Eqs. (3), (10), and (11), the ZCS condition of S 2 is satisfied. However, if S 2 is not turned off during V C1 < E 1 (t 1 < t < t 1a ), as shown in Fig.…”

Section: ) Mode 5: Off Statementioning

confidence: 99%

“…However, when a power converter that uses ZVS is applied to high power applications, ZVS is found to cause an increase in the tail loss owing to the generation of a high turn-off current. The behavior of the tail current under soft switching conditions was studied (9) (10) . An increase in the tail current was observed during the turnoff period under the soft switching condition of ZVS.…”

Section: (G) Figures 2(c)-(f)mentioning

confidence: 99%

Loss Analysis of High Power Chopper by Under-Zero Current Switching

Tsuruta

Kawamura

2015

IEEJ Journal IA

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This paper describes the evaluation of the IGBT partial turn-off behavior through three types of circuit topologies: hard switching (SW), Zero Voltage Switching (ZVS), and Tail Loss Cancel (TLC) method. Under-zero current switching (UCS) was examined through the high power back to back (BTB) experiment using a 90 kW 3-phase interleaved chopper. The proposed Snubber Assisted Zero voltage and Zero current transition (SAZZ) topology obtained the highest efficiency of 97.42% at 30 kW, 1.82% higher than hard SW (95.6%), and the highest efficiency over the entire power region. This was verified through the load test and loss breakdown up to 30 kW per phase, and its performance for the under-zero current switching behavior was confirmed.

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“…While the basic IGCT wafer design does not enable substantial improvements, several innovations, such as the Field Stop (FS) technology, the Injection-Enhanced Gate Transistor (IEGT) and the Soft Punch Through (SPT and SPT+) technology, have been introduced for the IGBT in the recent years. Several authors have compared IGBTs on the basis of the afore mentioned technologies for hard and soft switching [6]- [9]. The SPT+ technologies realize low losses, soft switching waveforms, a switching-self-clampingmode and wide SOA limits [8], [9].…”

Section: Introductionmentioning

confidence: 99%

Characterization of a new 4.5 kV press pack SPT+ IGBT for medium voltage converters

Alvarez

Filsecker

Bernet

2009

2009 IEEE Energy Conversion Congress and Exposition

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Recently developed IGBT press pack devices have become a competition for IGCTs in high power industrial applications. This paper presents an overview of state-of-theart medium voltage power semiconductors with active turn-off capability. A new 85 mm, 4.5 kV, 1.2 kA press pack SPT+ IGBT and the corresponding freewheeling diode are characterized at hard switching as a function of the parameters dc-link voltage, load current, junction temperature, stray inductance and gate unit conditions.

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Characterization and Comparison of High Blocking Voltage IGBTs and IEGTs Under Hard- and Soft-Switching Conditions

Cited by 54 publications

References 9 publications

On Implementation Possibilities of High-Voltage IGBTs in Resonant Converters

On Implementation Possibilities of High-Voltage IGBTs in Resonant Converters

Loss Analysis of High Power Chopper by Under-Zero Current Switching

Characterization of a new 4.5 kV press pack SPT+ IGBT for medium voltage converters

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