2019
DOI: 10.1016/j.pnsc.2019.08.002
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Characterization and application of Cu based superhydrophobic catalyst

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Cited by 6 publications
(3 citation statements)
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“…The strong peak around 1000 cm −1 in the FTIR spectrum (Figure 4) of the CSA-pumice in powder form corresponds to Si-O stretching vibrations. A twin peak between 2950 and 3600 cm -1 may show the existence of Cu co-planarity during Cu salt formation [19]. The -CH stretchings of stearic acid in the spectrum of the CSA-pumice are seen in the range of 2800-2950 cm -1 .…”
Section: Characterization Of the Volcanic Pumice Samplesmentioning
confidence: 98%
“…The strong peak around 1000 cm −1 in the FTIR spectrum (Figure 4) of the CSA-pumice in powder form corresponds to Si-O stretching vibrations. A twin peak between 2950 and 3600 cm -1 may show the existence of Cu co-planarity during Cu salt formation [19]. The -CH stretchings of stearic acid in the spectrum of the CSA-pumice are seen in the range of 2800-2950 cm -1 .…”
Section: Characterization Of the Volcanic Pumice Samplesmentioning
confidence: 98%
“…Furthermore, XPS can be applied to a greater variety of materials, adding polymers, glasses, and other insulating materials to the group of conductors and semiconductors typically studied with AES. XPS is used everywhere where surface or thin film composition plays a critical role in performance, including nanomaterials [43,44], photovoltaics [45,46], catalysis [47,48], corrosion [49], and general support of industrial research and manufacturing [50].…”
Section: Auger Electron Spectroscopymentioning
confidence: 99%
“…The study of metal, silicon (Si) interactions, and formation of interface is important owing to its application in the electronics and semiconductor industry. With Si-based technologies still governing the integrated circuits, the Cu–Si system has been of particular importance in delivering promising applications from silicon bronzes to catalysis, microelectronics, Li-ion batteries, , solar cells, and more. Copper (Cu) with its low cost, low electrical resistivity (∼1.7 μΩ cm), high melting point (1357.6 K), and low diffusivity showed tremendous potential over aluminum for applications in the electronic devices such as Schottky junctions, metal gates and local interconnects …”
Section: Introductionmentioning
confidence: 99%