?Characteristics of ZnO based TFT using La2O3 high-k dielectrics

Moon, Yeon-Keon; Lee, Sih; Kim, Dohyun; Lee, Je‐Hun; Jeong, Changwook; Park, Jong-Wan

doi:10.3938/jkps.55.1906

Cited by 22 publications

(32 citation statements)

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“…The simulated value of sub-threshold slope is 100 mV/decade, compared with the measured value of 225 mV/decade for the passivated device and 125 mV/decade for the unpassivated device. The similar value of sub-threshold slope for the simulated and measured unpassivated device is encouraging because it means that the unpassivated device has a small interface state charge which is a huge improvement over the devices [4,[6][7][8][9][10][11][12][13][14]. Next, the fixed charge parameter (Qf) in the simulation was altered to fit the simulation results with experiment.…”

Section: D Tcad Simulation: Comparing Experiments With 3d Simulationmentioning

confidence: 83%

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Top-Down Fabrication Process of ZnO NWFETs

Ditshego

Sultan

2019

JNanoR

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ZnO NWFETs were fabricated with and without Al2O3passivation. This was done by developing a new recipe for depositing the thin film of ZnO. By using a high donor concentration of 1.7 x 1018cm-3for the thin film, contact resistance values were lowered (passivated device had Rcon= 2.5 x 104Ω; unpassivated device had Rcon= 3.0 x 105Ω). By depositing Zn first instead of O2, steep subthreshold slopes were obtained. The passivated device had a subthreshold slope of 225 mV/decade and the unpassivated device had a slope of 125 mV/decade. Well-behaved electrical characteristics have been obtained and the passivated device shows field effect mobility of 10.9 cm2/Vs and the un-passivated device shows a value of 31.4 cm2/Vs. To verify the results, 3D simulation was also carried out which shows that the obtained values of sub-threshold slope translate into interface state number densities of-1.86 x 1013cm-2for the unpassivated device and 3.35 x 1014cm-2for the passivated device. The passivated device is suitable for biosensing applications.

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Section: D Tcad Simulation: Comparing Experiments With 3d Simulationmentioning

confidence: 83%

“…The device has two nanowires in parallel The electrical I-V characterization of the ZnO NWFETs was performed using an Agilent Technologies B1500A semiconductor parametric analyser. Hall measurements were made on the ZnO layer and the results were compared with results reported by other researchers [4,[6][7][8][9][10][11][12][13][14].…”

Section: Device Fabricationmentioning

confidence: 99%

Top-Down Fabrication Process of ZnO NWFETs

Ditshego

Sultan

2019

JNanoR

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“…Hence we found that HfO 2 , Y 2 O 3 , La 2 O 3 and ZrO 2 are the possible candidates that satisfy the constraints of high dielectric constant and a considerable band gap and conduction band offset. Figure 4 shows the relationship between subthreshold slope and and dielectric constant based on the data obtained in [5][6][7][8][9][10][11]. It can be observed that all the materials except La 2 O 3 have subthreshold slope lying in the range of .18-.23 V/decade.…”

Section: Resultsmentioning

confidence: 99%

“…La 2 O 3 has a very high subthreshold slope of 1.2 V/decade and hence the electrical performance will be poorer in comparison to others. Figure 5 shows the relationship between threshold voltage and dielectric constant based on the data obtained in [5][6][7][8][9][10][11]. The values are highly scattered as threshold voltage depends on some other factors also.…”

Section: Discussionmentioning

confidence: 99%

Selection of Gate Dielectrics for ZnO Based Thin-Film Transistors

Garg¹,

Gupta²

2016

Bulletin EEI

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“…When water is used instead of O2 for oxidation, the process is called thermal ALD. This process tends to produce films similar to chemical vapour deposition (CVD) techniques [24], [43], [44]. When O2 is used instead of water, then the process needs plasma energy.…”

Section: Growth Techniques Of Znomentioning

confidence: 99%

ZnO Nanowire Field Effect Transistor for Biosensing: A Review

Ditshego

2019

JNanoR

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The last 19 years have seen intense research made on zinc oxide (ZnO) material mainly due to the ability of converting the natural n-type material into p-type. For a long time, the p-type state was impossible to attain and maintain. The review focuses on ways of improving the doped ZnO material which acts as a channel for nanowire field effect transistor (NWFET) and biosensor. The biosensor has specific binding which is called functionalisation achieved by attaching a variety of compounds on the designated sensing area. Reference electrodes and buffers are used as controllers. Top-down fabrication processes are preferred over bottom-up because they pave way for mass production. Different growth techniques are reviewed and discussed. Strengths and weaknesses of the FET and sensor are also reviewed.

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?Characteristics of ZnO based TFT using La2O3 high-k dielectrics

Cited by 22 publications

References 0 publications

Top-Down Fabrication Process of ZnO NWFETs

Top-Down Fabrication Process of ZnO NWFETs

Selection of Gate Dielectrics for ZnO Based Thin-Film Transistors

ZnO Nanowire Field Effect Transistor for Biosensing: A Review

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