2005
DOI: 10.1016/j.jcrysgro.2004.10.119
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Characteristics of thermal fluctuation in a low Pr number melt at a large crucible for Czochralski crystal growth method

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Cited by 5 publications
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“…In our study, physical modeling of the Cz system using Wood's metal, which has a Pr number similar to that of silicon melt, in order to measure the thermal and velocity fields in Cz melt. The velocity field was measured empirically in a large crucible, and we reported that crystal rotation is the dominant factor influencing thermal fluctuation on the crystal-melt interface [11,12]. In general, crystal rotation during Cz growth is mainly used to provide a symmetric temperature profile, to suppress an angular variation of impurities, and to control the crystal-melt interface shape.…”
Section: Introductionmentioning
confidence: 99%
“…In our study, physical modeling of the Cz system using Wood's metal, which has a Pr number similar to that of silicon melt, in order to measure the thermal and velocity fields in Cz melt. The velocity field was measured empirically in a large crucible, and we reported that crystal rotation is the dominant factor influencing thermal fluctuation on the crystal-melt interface [11,12]. In general, crystal rotation during Cz growth is mainly used to provide a symmetric temperature profile, to suppress an angular variation of impurities, and to control the crystal-melt interface shape.…”
Section: Introductionmentioning
confidence: 99%