“…In our study, physical modeling of the Cz system using Wood's metal, which has a Pr number similar to that of silicon melt, in order to measure the thermal and velocity fields in Cz melt. The velocity field was measured empirically in a large crucible, and we reported that crystal rotation is the dominant factor influencing thermal fluctuation on the crystal-melt interface [11,12]. In general, crystal rotation during Cz growth is mainly used to provide a symmetric temperature profile, to suppress an angular variation of impurities, and to control the crystal-melt interface shape.…”