2001
DOI: 10.1080/00150190108016031
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Characteristics of the MFIS structure fabricated with the LSMCD-DERIVED SBT thin film and TiO2buffer layer

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Cited by 2 publications
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“…We thus concluded that this effect is predominantly due to a phase error of the measurements in the cryostat and we did not take it into account during the fitting procedure. One can see from figure 1 that the contribution of all polar phonons to the static permittivity is only about 100, although it is well known that the low-frequency permittivity is usually higher than 150 at RT [4,5,26]. We note that the thickness dependence of ε in SBT thin film was observed only below 200 nm [26], which is much less than the 5.5 µm that we used.…”
Section: Resultsmentioning
confidence: 55%
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“…We thus concluded that this effect is predominantly due to a phase error of the measurements in the cryostat and we did not take it into account during the fitting procedure. One can see from figure 1 that the contribution of all polar phonons to the static permittivity is only about 100, although it is well known that the low-frequency permittivity is usually higher than 150 at RT [4,5,26]. We note that the thickness dependence of ε in SBT thin film was observed only below 200 nm [26], which is much less than the 5.5 µm that we used.…”
Section: Resultsmentioning
confidence: 55%
“…One can see from figure 1 that the contribution of all polar phonons to the static permittivity is only about 100, although it is well known that the low-frequency permittivity is usually higher than 150 at RT [4,5,26]. We note that the thickness dependence of ε in SBT thin film was observed only below 200 nm [26], which is much less than the 5.5 µm that we used. Therefore we assume that the permittivity of our film agrees with that of the bulk samples.…”
Section: Resultsmentioning
confidence: 55%