Memories - Materials, Devices, Circuits and Systems
 2024
DOI: 10.1016/j.memori.2024.100101
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Design and analysis of novel La:HfO2 gate stacked ferroelectric tunnel FET for non-volatile memory applications

Neha Paras,
Shiromani Balmukund Rahi,
Abhishek Kumar Upadhyay
et al.
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