Characteristics of silicon nano-pillars fabricated by nano-sphere lithography and metal assisted chemical etching

Minh, Nguyễn Văn; Hieu, Dang Van; Pham, Van Tuan; Dung, Nguyen Duc; Hoang, Chu Manh

doi:10.1016/j.mssp.2022.106483

Cited by 6 publications

(6 citation statements)

References 43 publications

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“…[ 24 , 25 ]. Various nanostructures, such as holes [ 26 ], pillars [ 27 ], grooves [ 28 ], and irregular three-dimensional structures [ 29 , 30 ], have been prepared by MacEtch. However, MacEtch also has its limitations when the size of the metal-catalyzed structures is on the micrometer scale.…”

Section: Introductionmentioning

confidence: 99%

Wafer-Scale Fabrication of Ultra-High Aspect Ratio, Microscale Silicon Structures with Smooth Sidewalls Using Metal Assisted Chemical Etching

et al. 2023

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Silicon structures with ultra-high aspect ratios have great potential applications in the fields of optoelectronics and biomedicine. However, the slope and increased roughness of the sidewalls inevitably introduced during the use of conventional etching processes (e.g., Bosch and DRIE) remain an obstacle to their application. In this paper, 4-inch wafer-scale, ultra-high aspect ratio (>140:1) microscale silicon structures with smooth sidewalls are successfully prepared using metal-assisted chemical etching (MacEtch). Here, we clarify the impact of the size from the metal catalytic structure on the sidewall roughness. By optimizing the etchant ratio to accelerate the etch rate of the metal-catalyzed structure and employing thermal oxidation, the sidewall roughness can be significantly reduced (average root mean square (RMS) from 42.3 nm to 15.8 nm). Simulations show that a maximum exciton production rate (Gmax) of 1.21 × 1026 and a maximum theoretical short-circuit current density (Jsc) of 39.78 mA/cm2 can be obtained for the micropillar array with smooth sidewalls, which have potential applications in high-performance microscale photovoltaic devices.

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Section: Introductionmentioning

confidence: 99%

Wafer-Scale Fabrication of Ultra-High Aspect Ratio, Microscale Silicon Structures with Smooth Sidewalls Using Metal Assisted Chemical Etching

et al. 2023

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“…Laser interference lithography (LIL) offers another possibility for replacing photolithography and EBL in MaCE [14][15][16][17], but it only works for certain regular patterns and hence sacrifices pattern complexities. An alternative approach that has been widely used by many MaCE researchers is nanosphere lithography [18][19][20][21][22][23]. Again, it is limited to hexagonally arrayed patterns only and is mostly used for fabricating arrayed Si nanopillars.…”

Section: Introductionmentioning

confidence: 99%

Bi-Layer nanoimprinting lithography for metal-assisted chemical etching with application on silicon mold replication

Chen,

Lee

2023

Nanotechnology

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This paper reports a new type of nanoimprinting method called Bi-layer nanoimprinting lithography (BL-NIL), which can work along with metal-assisted chemical etching (MaCE) for fabricating nanostructures on silicon. In contrast to conventional nanoimprinting techniques, BL-NIL adds an interposing layer between the imprinting resist layer and silicon substrate. After the standard imprinting process, dry etching was used to etch away the residual imprinting layer and part of the interposing layer. Finally, the remaining interposing layer was wet-etched using its remover. This innovative approach can ensure cleanliness at the metal/silicon interface after metal lift-off processes, and therefore guarantees the success of MaCE. By combining BL-NIL and MaCE, expensive silicon molds with sub-micrometer/nanometer-scale feature sizes can be easily replicated and preserved. This is important for the application of nanoimprinting technologies in industrial manufacturing.

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“…Colloidal lithography techniques are often used in combination with metal-assisted chemical etching (MACE) for the fabrication of silicon structures. Typically, PS nanospheres serve as negative masking for the deposition of a noble metal that is used for the etching process [ 26 , 27 , 28 , 29 ]. MACE is mainly applied for patterning silicon and cannot be transferred to glass materials.…”

Section: Introductionmentioning

confidence: 99%

Antireflection Structures for VIS and NIR on Arbitrarily Shaped Fused Silica Substrates with Colloidal Polystyrene Nanosphere Lithography

et al. 2023

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Antireflective (AR) nanostructures offer an effective, broadband alternative to conventional AR coatings that could be used even under extreme conditions. In this publication, a possible fabrication process based on colloidal polystyrene (PS) nanosphere lithography for the fabrication of such AR structures on arbitrarily shaped fused silica substrates is presented and evaluated. Special emphasis is placed on the involved manufacturing steps in order to be able to produce tailored and effective structures. An improved Langmuir-Blodgett self-assembly lithography technique enabled the deposition of 200 nm PS spheres on curved surfaces, independent of shape or material-specific characteristics such as hydrophobicity. The AR structures were fabricated on planar fused silica wafers and aspherical planoconvex lenses. Broadband AR structures with losses (reflection + transmissive scattering) of <1% per surface in the spectral range of 750–2000 nm were produced. At the best performance level, losses were less than 0.5%, which corresponds to an improvement factor of 6.7 compared to unstructured reference substrates.

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Characteristics of silicon nano-pillars fabricated by nano-sphere lithography and metal assisted chemical etching

Cited by 6 publications

References 43 publications

Wafer-Scale Fabrication of Ultra-High Aspect Ratio, Microscale Silicon Structures with Smooth Sidewalls Using Metal Assisted Chemical Etching

Wafer-Scale Fabrication of Ultra-High Aspect Ratio, Microscale Silicon Structures with Smooth Sidewalls Using Metal Assisted Chemical Etching

Bi-Layer nanoimprinting lithography for metal-assisted chemical etching with application on silicon mold replication

Antireflection Structures for VIS and NIR on Arbitrarily Shaped Fused Silica Substrates with Colloidal Polystyrene Nanosphere Lithography

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