Characteristics of phase formation during gase oxidation

Berchenko, N. N.; Balitskii, O.A.; Lutsiv, R.V.; Savchyn, V.; Vasyltsiv, V.

doi:10.1016/s0254-0584(97)80280-5

Cited by 27 publications

(14 citation statements)

References 9 publications

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“…Thermal oxidation at temperatures lower than 900 K, leads to a decrease of the GaS CL intensity and to the appearance of the high-energy shoulder, positioned near 2.9 eV (the blue luminescence of electron transitions between oxygen and gallium vacancies in bGa 2 O 3 [15]). With the oxidation temperature raising to 1100 K, the intensity of the b-Ga 2 O 3 CL band drastically increases with a simultaneous shift to the higher-energy region, as was observed for GaSe native oxide [1]. At the same time, the band at 2.6 eV does not disappear, but loses its structure.…”

Section: Article In Pressmentioning

confidence: 55%

“…Condensed phase equilibrium diagrams were calculated in the same way as for In-Se-O and GaSe-O systems [1,3]. Three indium (In 6 3 .…”

Section: Phase Equilibrium Diagrams and Equilibrium Constants Of Oxidmentioning

confidence: 99%

“…In the case of III-VI compounds, this technique is not very reliable due to the complexity of the sequence of intermediate phases. For example, oxidation of indium and gallium selenides leads to precipitation at the interface boundary both selenates and selenides of the corresponding metals with the higher selenium content [1][2][3][4]. In fact, till now not much attention has been given to the oxidation behaviour of isotypical indium and gallium monosulphides.…”

Section: Introductionmentioning

confidence: 99%

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Thermal oxidation of indium and gallium sulphides

Balitskii

Savchyn

2005

Physica B: Condensed Matter

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Section: Article In Pressmentioning

confidence: 55%

“…Condensed phase equilibrium diagrams were calculated in the same way as for In-Se-O and GaSe-O systems [1,3]. Three indium (In 6 3 .…”

Section: Phase Equilibrium Diagrams and Equilibrium Constants Of Oxidmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Thermal oxidation of indium and gallium sulphides

Balitskii

Savchyn

2005

Physica B: Condensed Matter

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“…where Z j is as in (4). Calculations show the possibility of a sharp change of Se and O concentration depending on µ Se , µ O (Fig.…”

Section: Calculations Of Selenium and Oxygen Mean Occupation Numbersmentioning

confidence: 96%

“…However, the thicker is resulting interface layer the worse is the heterostructure prepared. For instance, in papers [4,5] X-ray and cathodoluminescent methods confirmed that the heat treatment of GaSe in the air at low temperatures (T = 450 • C) is accompanied by Ga 2 Se 3 formation while at higher temperatures (T ≥ 750 • C) Ga 2 O 3 is observed. However, the presence of Ga 2 Se 3 interface between Ga 2 O 3 and GaSe surface even at high temperatures significantly decreases the photoconductivity spectrum of the obtained heterostructures [6].…”

Section: Introductionmentioning

confidence: 97%

Analysis of the behaviour of chalcogen and oxygen in the system of GaSe–Ga2Se3–Ga2O3

Stakhira¹,

Tovstyuk²

2005

Materials Science and Engineering: B

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Solution‐Processed GaSe Nanoflake‐Based Films for Photoelectrochemical Water Splitting and Photoelectrochemical‐Type Photodetectors

Zappia

Bianca

Bellani

et al. 2020

Adv Funct Materials

106

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Gallium selenide (GaSe) is a layered compound, which has been exploited in nonlinear optical applications and photodetectors due to its anisotropic structure and pseudodirect optical gap. Theoretical studies predict that its 2D form is a potential photocatalyst for water splitting reactions. Herein, the photoelectrochemical (PEC) characterization of GaSe nanoflakes (single‐/few‐layer flakes), produced via liquid phase exfoliation, for hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) in both acidic and alkaline media is reported. In 0.5 m H2SO4, the GaSe photoelectrodes display the best PEC performance, corresponding to a ratiometric power‐saved metric for HER (Φsaved,HER) of 0.09% and a ratiometric power‐saved metric for OER (Φsaved,OER) of 0.25%. When used as PEC‐type photodetectors, GaSe photoelectrodes show a responsivity of ≈0.16 A W−1 upon 455 nm illumination at a light intensity of 63.5 µW cm−2 and applied potential of −0.3 V versus reversible hydrogen electrode (RHE). Stability tests of GaSe photodetectors demonstrated a durable operation over tens of cathodic linear sweep voltammetry scans in 0.5 m H2SO4 for HER. In contrast, degradation of photoelectrodes occurred in both alkaline and anodic operation due to the highly oxidizing environment and O2‐induced (photo)oxidation effects. The results provide new insight into the PEC properties of GaSe nanoflakes for their exploitation in photoelectrocatalysis, PEC‐type photodetectors, and (bio)sensors.

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Characteristics of phase formation during gase oxidation

Cited by 27 publications

References 9 publications

Thermal oxidation of indium and gallium sulphides

Thermal oxidation of indium and gallium sulphides

Analysis of the behaviour of chalcogen and oxygen in the system of GaSe–Ga2Se3–Ga2O3

Solution‐Processed GaSe Nanoflake‐Based Films for Photoelectrochemical Water Splitting and Photoelectrochemical‐Type Photodetectors

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