An ion milling-assisted study of defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates was performed. The films appeared to contain initially neutral Te-related defects with concentration of 10 17 cm −3 , typical of HgCdTe. The concentration of residual donors was found to be quite low ((3-8) × 10 14 cm −3 ). Specific to HgCdTe/Si technology appeared to be a considerable number of stacking faults, which affected the carrier mobility in n-type material. These defects can be annealed in He atmosphere at 230 • C, and after ion milling the electrical parameters of n-type HgCdTe/Si films approach those of high-quality bulk crystals.

A solid-phase mechanochemical technology of production of polycrystalline InSе intercalated with Ni up to 1.25 at. % has been developed. The x-ray and phase analyses of the produced NixInSe samples confirm their homogeneity and demonstrate a nonmonotonic Ni-content dependence of the lattice constant along the axis normal to the layers. Analysis of the low-temperature (77 K) impedance response within the frequency region 10–3–106 Hz shows a good correlation between the change in interlayer distance and in the band conductivity observed with increasing Ni concentration. However, the Ni concentration dependence of specific magnetization demonstrates an irregular increase at x ∼ 1 and does not coincide with the former. Such behavior is explained by the proposed theoretical model, which at the same time unveiled the mechanism behind the increasing contribution of free carrier concentration to conductivity – hybridization of electron orbitals of guest nickel and the lattice layers.

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