Characteristics of p- and n-channel poly-Si/Si/sub 1-x/Ge/sub x//Si sandwiched conductivity modulated thin-film transistors

The formation of multilayer structures in oxygen-implanted silicon by the introduction of germanium is reported. Our results show that the oxygen distribution can be split under carefully controlled annealing conditions. The typical annealing process consists of first raising the furnace temperature from 600 to 1200 °C within 30 min and then holding the temperature at 1200 °C for 2 h. The faster crystallization rate of amorphous silicon germanium (SiGe) and germanium rejection from the oxide contribute to the final multilayer structure. Our findings suggest that oxygen profile engineering is possible and single-energy ion implantation can be utilized to fabricate multilayer structures containing multiple buried oxide layers. In addition, our results suggest that, in SiGe-on-insulator fabrication, the annealing step at a moderate temperature or a slow temperature ramp-up rate during the high-temperature annealing step is much more critical than in conventional silicon-on-insulator fabrication.

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Oxygen profile engineering in silicon by germanium addition and high-temperature annealing

Chu

Zhang

et al. 2003

Applied Physics Letters

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TRANSPORT AND ELECTRONIC PROPERTIES OF THE GaAs ALD-FET

Oubram¹,

Gaggero‐Sager²,

Ouadou³

2011

PIER

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Abstract-According to the scaling-down theory, the ALD-FET (Atomic Layer Doping-Field Effect Transistor) structure has attracted a lot of attention in view of its uses for developing devices with very short channels and for achieving very-high-speed operation. Therefore, there is a strong need to obtain an accurate understanding of carrier transport (mobility and conductivity) in such devices. In this work, we report the carrier transport based on the electronic structure of devices. Our results include analytical expressions of both mobility and conductivity. Our analytical expressions for the mobility and conductivity allow us to analyze transport in ALD-FET. We report regions where this device operates in digital and analogue mode. These regions are delimited in terms of intrinsic and extrinsic parameters of the system. The width of the Ohmic region as well as the NDR (Negative Differential Resistance) properties of the system are also characterized.

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Characteristics of p- and n-channel poly-Si/Si/sub 1-x/Ge/sub x//Si sandwiched conductivity modulated thin-film transistors

Cited by 2 publications

References 10 publications

Oxygen profile engineering in silicon by germanium addition and high-temperature annealing

Oxygen profile engineering in silicon by germanium addition and high-temperature annealing

TRANSPORT AND ELECTRONIC PROPERTIES OF THE GaAs ALD-FET

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