2003
DOI: 10.1063/1.1592884
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Oxygen profile engineering in silicon by germanium addition and high-temperature annealing

Abstract: The formation of multilayer structures in oxygen-implanted silicon by the introduction of germanium is reported. Our results show that the oxygen distribution can be split under carefully controlled annealing conditions. The typical annealing process consists of first raising the furnace temperature from 600 to 1200 °C within 30 min and then holding the temperature at 1200 °C for 2 h. The faster crystallization rate of amorphous silicon germanium (SiGe) and germanium rejection from the oxide contribute to the … Show more

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Cited by 5 publications
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“…28 The chemical states of titanium and carbon in the deposited as well as implanted and annealed samples determined by XPS are shown in Fig. 28 The chemical states of titanium and carbon in the deposited as well as implanted and annealed samples determined by XPS are shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…28 The chemical states of titanium and carbon in the deposited as well as implanted and annealed samples determined by XPS are shown in Fig. 28 The chemical states of titanium and carbon in the deposited as well as implanted and annealed samples determined by XPS are shown in Fig.…”
Section: Resultsmentioning
confidence: 99%