Characteristics of Oxynitride Prepared by Liquid Phase Deposition

Lee, Ming‐Kwei; Lin, Shuo-Yen; Shyr, Jong-Min

doi:10.1149/1.1344552

Cited by 8 publications

(14 citation statements)

References 15 publications

(20 reference statements)

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“…For photo-LPD-SiON:F growth, the higher F concentration in the film is due to the higher concentration of SiF 6 2 in the growth solution. 8 The LPD-SiO 2 film deposition is dominated by the concentration of intermediate siloxane oligomers SiF m (OH) 4Ϫm (m Ͻ 4) in the growth solution.…”

Section: Resultsmentioning

confidence: 99%

“…4 Few papers about the growth of fluorine-doped oxynitride films ͑liquid-phase desorption LPD-SiON:F͒ have been reported. 5,6 The conventional liquid-phase deposition ͑LPD͒ method has the advantages of low-temperature growth, a simple process, and low cost. It can also grow high quality fluorine-doped SiO 2 due to the use of the hydrosilicofluoric acid (H 2 SiF 6 ) source.…”

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confidence: 99%

“…From a previous study, 8 it was found that the H 2 SiF 6 growth solution has strong absorption of UV light under the photoillumination. The concentration of species SiF 6 2Ϫ in the growth solution shows a significant increase which was examined by UV transmission spectra. That is to say, F and N concentrations of the deposited film could be enhanced by photoillumination.…”

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confidence: 99%

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Electrical Properties of Fluorine-Doped Oxynitride Films Prepared by Photoillumination Liquid-Phase Deposition

Lee

Shih

Lin

et al. 2004

J. Electrochem. Soc.

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Using an aqueous solution of hydrosilicofluoric acid, boric acid, and ammonium hydroxide, fluorine-doped oxynitride films can be deposited on a silicon substrate. The fluorine and nitrogen atoms are piled up at about 160 Å from the interface. The electrical characteristics were improved by decreasing the film thickness toward 160 Å due to the increase of fluorine and nitrogen concentrations. The electrical characteristics were degraded by further decreasing the film thickness from 160 to 110 Å due to the interfacial nonstoichiometric oxide. The quality of fluorine-doped oxynitride films with a prepared thickness thinner than 160 Å can be improved under photoillumination. Thus higher nitrogen and fluorine concentrations of the films can be obtained by photoillumination.

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Section: Resultsmentioning

confidence: 99%

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confidence: 99%

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confidence: 99%

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Electrical Properties of Fluorine-Doped Oxynitride Films Prepared by Photoillumination Liquid-Phase Deposition

Lee

Shih

Lin

et al. 2004

J. Electrochem. Soc.

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“…The nitrogen concentration is accumulated at the interface of SiOF/Si, which is similar to our previous observation. 32 There are plenty of Si reactive sites on the silicon surface for the formation of SiuN bond, so the N atom is easily bonded to the silicon surface. Afterward, there are fewer Si reactive sites available on the growing surface for SiuN bond formation in the SiOF structure.…”

Section: Resultsmentioning

confidence: 99%

High Quality Fluorinated Silicon Dioxide Films Prepared by Temperature-Difference-Based Liquid-Phase Deposition with Ammonium Hydroxide Incorporation

Lee

Shieh

Shih

et al. 2003

J. Electrochem. Soc.

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This study investigates the properties of fluorinated silicon dioxide films using hydrosilicofluoric acid and ammonium hydroxide aqua as sources by the temperature-difference-based liquid-phase deposition method. According to the experimental results, the deposition rate and refractive index increase with the concentration of ammonium hydroxide aqua. The secondary ion mass spectrometry depth profile shows that the fluorine concentration is high and uniform throughout the deposited film. The nitrogen is accumulated at the interface. The flatband voltage and leakage current density are functions of the concentration of ammonium hydroxide aqua.

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“…The mixed aqueous solutions of H 2 SiF 6 saturated with silica gel and H 3 BO 3 ͑0.01 M͒ were used as the deposition solution. 22 The volumes of H 2 SiF 6 and H 3 BO 3 aqueous solutions were kept at 30 and 7.5 mL; the deposition temperature was fixed at 40°C. After the deposition, SiO 2 films were thermally annealed at 400°C in oxygen for 10 min to decrease the oxygen vacancy and improve the stoichiometry.…”

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confidence: 99%

Electrical Properties of Liquid Phase Deposited SiO[sub 2] on Photochemical Treated GaN

Lee¹,

Ho²,

Zeng³

2008

Electrochem. Solid-State Lett.

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The electrical characteristics of liquid phase deposited SiO 2 on GaN substrate were investigated. More Ga-OH bonds can be formed on GaN surface treated by KOH solution under a mercury arc lamp excitation. The OH bonds will absorb siloxane oligomer and enhance liquid phase deposited SiO 2 . A better quality of SiO 2 /GaN interface can be obtained and the interface state density is 1.24 ϫ 10 12 cm −2 eV −1 at the energy of 0.42 eV below the edge of conduction band. The leakage current density of the metal oxide semiconductor diode can be improved from 6.98 ϫ 10 −5 to 3.28 ϫ 10 −6 A/cm 2 at +1 MV/cm. GaN-based materials have been applied for the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodiodes. They are also attractive for electronic devices due to their high electron saturation velocity and high breakdown voltage. Many efforts were devoted to insulators-GaN to fulfill the applications. For optoelectronic devices, SiO 2 is applied to different kinds of structures to realize light extraction like reflector, epitaxial lateral overgrowth, etc. 1,2 For electronic devices, SiO 2 passivation can suppress the drain current dispersion on GaN/AlGaN high electron mobility transistor ͑HEMT͒ due to the elimination of deep traps. 3,4 GaN metal oxide semiconductor field effect transistor ͑MOSFET͒ with SiO 2 as the gate oxide will result in lower gate leakage current especially for low noise and reliable power electronics compared with that of metal semiconductor field effect transistor ͑MESFET͒ with a Schottky gate. 5,6 Recently, SiO 2 deposition on GaN-based MOSFET as gate oxides was reported by different growth methods including plasma enhanced chemical vapor deposition ͑PECVD͒, 7 photochemical vapor deposition, 8 remote plasmaassisted oxidation, 9 Si diffused layer, 10 etc. However, the high leakage current densities of these MOS structures, mainly from the interface state density ͑D it ͒, need further improvement. The high D it is from the difficult binding between GaN and SiO 2 , and could be associated with the chemical stability of GaN.Liquid phase deposition ͑LPD͒ method has several advantages such as low deposition temperature ͑40°C͒, atmospheric growth, selective growth, good step coverage, and low cost. High quality LPD SiO 2 with very low leakage current density ͑ϳ10 −9 at A/cm 2 at 10 MV/cm͒ was prepared with the aqueous solutions of hydrofluosilicic acid ͑H 2 SiF 6 ͒ and boric acid ͑H 3 BO 3 ͒ 11 and has been applied in integrated circuit ͑IC͒ fabrication processes. 12,13 The chemical reactions for LPD SiO 2 have been proposed as follows 14,15 The silicon halide ͓SiF m ͑OH͒ 4−m ͔ can be hydrolyzed and changed into siloxane oligomer OH-͑SiO x ͒-OH by catalytic reactions. In Eq. 2, H 3 BO 3 is used as fluorine scavenger to drive Eq. 1 toward the right to promote SiO 2 deposition. The dehydration between siloxane oligomer and Si-OH existing on Si substrate surface forms SiO 2 film. 16,17 Therefore, the OH bond on substrate surface is essential for SiO 2 deposition. The...

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Characteristics of Oxynitride Prepared by Liquid Phase Deposition

Cited by 8 publications

References 15 publications

Electrical Properties of Fluorine-Doped Oxynitride Films Prepared by Photoillumination Liquid-Phase Deposition

Electrical Properties of Fluorine-Doped Oxynitride Films Prepared by Photoillumination Liquid-Phase Deposition

High Quality Fluorinated Silicon Dioxide Films Prepared by Temperature-Difference-Based Liquid-Phase Deposition with Ammonium Hydroxide Incorporation

Electrical Properties of Liquid Phase Deposited SiO[sub 2] on Photochemical Treated GaN

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