Electrical Properties of Fluorine-Doped Oxynitride Films Prepared by Photoillumination Liquid-Phase Deposition

Abstract

Using an aqueous solution of hydrosilicofluoric acid, boric acid, and ammonium hydroxide, fluorine-doped oxynitride films can be deposited on a silicon substrate. The fluorine and nitrogen atoms are piled up at about 160 Å from the interface. The electrical characteristics were improved by decreasing the film thickness toward 160 Å due to the increase of fluorine and nitrogen concentrations. The electrical characteristics were degraded by further decreasing the film thickness from 160 to 110 Å due to the interfacial nonstoichiometric oxide. The quality of fluorine-doped oxynitride films with a prepared thickness thinner than 160 Å can be improved under photoillumination. Thus higher nitrogen and fluorine concentrations of the films can be obtained by photoillumination.

A Silicon Texturing Technique Based on Etching Through a Liquid-Phase Deposited Oxide Mask

“…20 The absorption band ϳ1600 cm −1 is from H 2 O vibrations and the 940 cm −1 peak for the Si-F stretching vibration was not obviously observed. 21 The morphology of the textured Si surface after complete removal of the oxide layer is shown in the SEM image of Fig. 4.…”