Characteristics of micro-quantity Sn addition to amorphous indium–zinc–oxide thin films deposited by using DC magnetron sputtering

Thermoelectric and electrical properties of micro-quantity Sn-doped amorphous indium–zinc oxide thin films

“…In our previous study, 800 ppm Sn-doped indium-zinc oxide (IZO:Sn) thin films have good electrical properties even though they have amorphous structure. 5) This amorphous IZO:Sn thin films have great expectation for a low total thermal conductivity due to low thermal conductivity by phonon. 6) In general, the electrical conductivity (σ) is proportional to carrier density (n) and mobility ( μ), however, the Seebeck coefficient (S) is inversely proportional to the n. In this trade off relation, to obtain a high thermoelectric performance, both σ and S should be controlled.…”