Thermoelectric and electrical properties of micro-quantity Sn-doped amorphous indium–zinc oxide thin films

Byeon, Jayoung; Kim, Seohan; Lim, Jae‐Hong; Song, Jae Yong; Park, Sun Hwa; Song, Pung Keun

doi:10.7567/jjap.56.010304

Cited by 6 publications

(7 citation statements)

References 16 publications

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“…Therefore, it is possible to achieve a high σ as well as a low κ simultaneously, through high mobility (µ) and low carrier density (n). In previous studies, we confirmed that the amorphization of conductive oxide thin film can improve the ZT value without degrading the electrical and optical properties [24]. where S, ρ, κ, σ, κe, κl, and T represent the Seebeck coefficient, resistivity, thermal conductivity, electrical conductivity, electron thermal conductivity, lattice thermal conductivity, and absolute temperature, respectively.…”

Section: Introductionsupporting

confidence: 75%

“…Therefore, it is possible to achieve a high σ as well as a low κ simultaneously, through high mobility (μ) and low carrier density (n). In previous studies, we confirmed that the amorphization of conductive oxide thin film can improve the ZT value without degrading the electrical and optical properties [24]. Based on these backgrounds, in this study, we amorphized the thin films to achieve a low κ value by controlling n with various zinc concentrations.…”

Section: Introductionsupporting

confidence: 52%

“…The ZT values from the latest research are measured at various temperatures. In order to help comparison, they are standardized to 300 K [14,[18][19][20][21][22][23][24][25][26][27][28][29]. It is confirmed that the crystalline-structured oxide TE materials demonstrate low ZT values due to their high κl, despite their low sheet resistance.…”

Section: Introductionmentioning

confidence: 99%

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Thermoelectric Properties of Zinc-Doped Indium Tin Oxide Thin Films Prepared Using the Magnetron Co-Sputtering Method

et al. 2019

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The thermoelectric properties of In−Sn−O (ITO) thin films were estimated in relation to microstructures with various zinc concentrations. The zinc-doped ITO (ITO:Zn) thin films were amorphized with increasing zinc concentration. The carrier density (n) of the thin films decreased as the zinc content increased, which could be attributed to a decline in oxygen vacancies. The highest Seebeck coefficient (S, 64.91 μV/K) was obtained with an ITO film containing 15.33 at.% of Zn due to the low n value, which also exhibited the highest power factor (234.03 μW K−2 m−1). However, the highest thermoelectric figure of merit value (0.0627) was obtained from the film containing 18.26 at.% of Zn because of both low n and the lowest thermal conductivity (κ) (1.085 W m−1·K−1). The total κ decreased as increasing zinc concentration in the thin films. It was confirmed that the decrease of total κ was dominated by electron κ rather than lattice κ.

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Section: Introductionsupporting

confidence: 75%

Section: Introductionsupporting

confidence: 52%

Section: Introductionmentioning

confidence: 99%

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Thermoelectric Properties of Zinc-Doped Indium Tin Oxide Thin Films Prepared Using the Magnetron Co-Sputtering Method

et al. 2019

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“…Recent studies have clarified its crucial role in the physical properties of oxide semiconductors [12,[29][30][31]. In this study, we demonstrate the effect of hydrogen flow during sputtering on the mechanical properties of a-IZO thin films.…”

Section: Introductionmentioning

confidence: 74%

Stabilizing of Mechanical Property of Amorphous In−Zn−O Thin Films with Hydrogen Flow

et al. 2019

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Amorphous In−Zn−O thin films were deposited with various hydrogen flow rates using a magnetron sputtering system. With the addition of hydrogen, the mechanical stability of the films was dramatically improved without any degradation of electrical properties and optical transmittance. The average change in the resistance of the sample deposited at a hydrogen flow rate of 0.4% was approximately six times lower than that in the sample deposited without hydrogen. Both, the compressive residual stress and absorption coefficient of the sample, decreased with hydrogen flow, indicating similar trends with the average change in the resistance. The absorption coefficient near 3.1 eV indicated that subgap state defects also decreased with increasing hydrogen flow rates. It was confirmed that the improvement in mechanical stability was derived from the suppression of subgap defects due to the hydrogen impurity. Thus, we demonstrated that hydrogen is a promising candidate for stabilizing the mechanical properties of oxide thin films.

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“…ITO and IZO are typical transparent materials, however it is well known that the ITO is easily crystallized, whereas the In−Zn−O formed at low-temperature deposition tends to be amorphous [47,48]. Therefore, we compared the TE properties of these two materials.…”

Section: Experimental Measurements and Discussionmentioning

confidence: 99%

Transparent Amorphous Oxide Semiconductor as Excellent Thermoelectric Materials

Kim

Byeon

et al. 2018

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It is demonstrated that transparent amorphous oxide semiconductors (TAOS) can be excellent thermoelectric (TE) materials, since their thermal conductivity (κ) through a randomly disordered structure is quite low, while their electrical conductivity and carrier mobility (μ) are high, compared to crystalline semiconductors through the first-principles calculations and the various measurements for the amorphous In−Zn−O (a-IZO) thin film. The calculated phonon dispersion in a-IZO shows non-linear phonon instability, which can prevent the transport of phonon. The a-IZO was estimated to have poor κ and high electrical conductivity compared to crystalline In2O3:Sn (c-ITO). These properties show that the TAOS can be an excellent thin-film transparent TE material. It is suggested that the TAOS can be employed to mitigate the heating problem in transparent display devices.

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Thermoelectric and electrical properties of micro-quantity Sn-doped amorphous indium–zinc oxide thin films

Cited by 6 publications

References 16 publications

Thermoelectric Properties of Zinc-Doped Indium Tin Oxide Thin Films Prepared Using the Magnetron Co-Sputtering Method

Thermoelectric Properties of Zinc-Doped Indium Tin Oxide Thin Films Prepared Using the Magnetron Co-Sputtering Method

Stabilizing of Mechanical Property of Amorphous In−Zn−O Thin Films with Hydrogen Flow

Transparent Amorphous Oxide Semiconductor as Excellent Thermoelectric Materials

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