Characteristics of laser diodes with a partially intermixed GaAs-AlGaAs quantum well

Nagai, Yutaka; Shigihara, K.; Karakida, S.; Kakimoto, S.; Otsubo, M.; Ikeda, Kenji

doi:10.1109/3.400386

Cited by 18 publications

(7 citation statements)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Since there are two QW's, the current required for each QW is approximately 277 and 338 A/cm for the as-grown and interdiffused QW's, respectively. Nagai et al [20] have obtained a shift in energy of 66 meV while the threshold current increases by about 33% for a 60Å AlGaAs-GaAs QW. Although some details of the devices studied in these experiments are not known, we can still make some approximate comparisons.…”

Section: Discussionmentioning

confidence: 97%

“…In the fabrication of buried heterostrucuture lasers [1]- [3], [14], [15], regions of the wafer are disordered by interdiffusion so that they become passive regions with different refractive indexes and provides optical guiding. The integration of lasers with different wavelengths is made possible by modifying the bandgaps of different regions in the wafer with interdiffsuion techniques [16]- [20]. Experimental results show that the wavelengths can be shifted significantly without a tremendous increase in the operation current of the laser.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Optical gain of interdiffused InGaAs-As and AlGaAs-GaAs quantum wells

Chan

Li²,

Chan³

1998

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

We have analyzed theoretically the effects of interdiffsuion on the gain, differential gain, linewidth enhancement factor, and the injection current density of In 0:2 Ga 0:8 As-GaAs and Al 0:3 Ga 0:7 As-GaAs quantum-well (QW) lasers. We have calculated the electron and hole subband structures including the effects of valence band mixing and strains. The optical gain is then caculated using the density matrix approach. Our results show that the gain spectrum can be blue-shifted without an enormous increase in the injected current density. Imposing an upper limit (416 A1cm 02) on the injection current density for a typical laser structure, we find that the InGaAs-GaAs and AlGaAs-GaAs QW lasers can be blue-shifted by 24 and 54 nm, respectively. Our theoretical results compare well with the tuning ranges of 53 and 66 meV found for AlGaAs-GaAs QW's in some experiments. This indicates that the interdiffusion technique is useful for the tuning of laser operation wavelength for multiwavelength applications.

show abstract

Section: Discussionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Optical gain of interdiffused InGaAs-As and AlGaAs-GaAs quantum wells

Chan

Li²,

Chan³

1998

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

show abstract

“…This process modifies the quantized energy levels and the respective wave functions of the as-grown QW structure [3]. Consequently, the optical properties of the diffused QW (DFQW) are modified and can be used to develop novel optoelectronic devices [4].…”

Section: Introductionmentioning

confidence: 99%

The effect of interdiffusion on the intersubband optical properties in a modulation-doped quantum-well structure

1998

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

The linear and nonlinear (based on optical field intensity) intersubband absorptions in conduction band, and its change in refractive index in AlGaAs-GaAs interdiffused quantum wells (QW's) are presented. The calculation of the electron energy levels and the envelope wave functions in a modulation doped interdiffused QW's with screening effects are considered. QW interdiffusion shows a wavelength tunability of the intersubband absorption peaks and refractive index dispersions. This shifting of the transition energies is also demonstrated here to be a useful technique for broad-band and multicolor photodetector application. In addition, it can serve to remove noise, such as minor peaks and dispersions, in the optical spectra.

show abstract

“…Zn is well known to diffuse easily at elevated temperature and has been widely used as an impurity source in impurity-induced interdiffusion [17], [18]. But our data clearly demonstrated that the Zn dopants in the p -GaAs substrate did not play a dominant role under these annealing conditions.…”

Section: Resultsmentioning

confidence: 52%

Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures

Yuan

Jagadish

Kim

et al. 1998

IEEE J. Select. Topics Quantum Electron.

View full text Add to dashboard Cite

Anodic oxides of GaAs were shown to enhance the intermixing in GaAs-AlGaAs quantum wells (QW) during rapid thermal processing. Proximity of the anodic oxide to the QW has been shown to influence the photoluminescence (PL) energy shift due to intermixing. Anodic oxide induced intermixing has been used to enhance quantum-wire PL in the structures grown on V-groove patterned GaAs substrates. This has been attributed to enhanced lateral confinement in these structures. Injection of defects such as group-III vacancies or interstitials was considered to be driving force for the intermixing.

show abstract

Characteristics of laser diodes with a partially intermixed GaAs-AlGaAs quantum well

Cited by 18 publications

References 44 publications

Optical gain of interdiffused InGaAs-As and AlGaAs-GaAs quantum wells

Optical gain of interdiffused InGaAs-As and AlGaAs-GaAs quantum wells

The effect of interdiffusion on the intersubband optical properties in a modulation-doped quantum-well structure

Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures

Contact Info

Product

Resources

About