Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures

Abstract

Anodic oxides of GaAs were shown to enhance the intermixing in GaAs-AlGaAs quantum wells (QW) during rapid thermal processing. Proximity of the anodic oxide to the QW has been shown to influence the photoluminescence (PL) energy shift due to intermixing. Anodic oxide induced intermixing has been used to enhance quantum-wire PL in the structures grown on V-groove patterned GaAs substrates. This has been attributed to enhanced lateral confinement in these structures. Injection of defects such as group-III vacancies or interstitials was considered to be driving force for the intermixing.

Ion Implantation Induced Interdiffusion in Quantum Wells for Optoelectronic Device Integration

“…Impurity induced disordering (lID) and impurity free vacancy disordering (IFVD) have been widely used to modify the shape of the quantum wells, in turn their electrical and optical properties [4][5][6][7]. However, in the case of impurity induced disordering, residual impurities are detrimental to the performance of devices.…”