Characteristics of La2O3 thin films deposited using metal organic chemical vapor deposition with different oxidant gas

First-Principles Investigations on Structural, Elastic, Electronic, and Optical Properties of Tetragonal HfSiO4

“…In the last few years, there is extensive research on alternative gate dielectrics to replace SiO 2 such as Al 2 O 3 [3], La 2 O 3 [4,5], ZrO 2 [6,7], HfO 2 [8][9][10][11], SrZrO 3 [12,13], SrHfO 3 [14][15][16], and BaHfO 3 [17,18]. Among these potential candidates, Hf-based oxide (HfO 2 ) and its silicate mixture (HfSiO 4 ) are considered to be substitute SiO 2 as gate dielectric in next-generation CMOS devices because of their good thermodynamic stability and electrical performance, sufficiently high dielectric constant, adequate interfacial properties with silicon, and so on [2,[19][20][21][22][23].…”

Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition

“…After being annealing treated, the intensities of the GIXRD peaks increase, which means the enhancement in the degree of crystallinity. After annealing at 600 °C, except for the weak cubic (332) plane [14], the film was mainly crystallized to hexagonal phase as the GIXRD diffractograms exhibit strong hexagonal planes such as (101), (102), (103), and (112). Besides, further increase in the annealing temperature up to 800 °C does not seem to significantly affect the GIXRD diffractograms of the film.…”

“…La 2 O 3 thin films have been prepared by various physical and chemical deposition methods, such as electron beam evaporation [12], vacuum evaporation [13], chemical vapor deposition [14], atomic layer deposition (ALD) [15], and molecular beam epitaxy [16]. Among the deposition methods mentioned above, due to the nature of the self-limited reaction, ALD has been considered as one of the most promising deposition techniques to produce high quality La 2 O 3 thin films with atomic scale thickness controllability, fine uniformity, and excellent conformality [17].…”

Characterization of europium doped lanthanum oxide films prepared by spray pyrolysis

“…Various methods for synthesis of luminescent powders and films based on Eu have been employed, such as: sol gel techniques, homogenous precipitation, thermal hydrolysis, laser ablation, chemical vapor synthesis, microemulsion, microwave plasma-torch technique, combustion synthesis and others [8,[14][15][16]. The ultrasonic spray pyrolysis method is a well established process of depositing films [17].…”