1998
DOI: 10.1063/1.122703
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Characteristics of InGaAs quantum dot infrared photodetectors

Abstract: A quantum dot infrared photodetector (QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° angle facet at 60 K. The QDIPs exhibit some unique electro-optic characteristics such as a strong negative differential photoconductance effect and blueshift of the response peak wavelength.

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Cited by 167 publications
(86 citation statements)
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References 12 publications
(20 reference statements)
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“…For comparison to figure 4 and figure 5, the dynamic photoresponse measured at room temperature with the same bias voltage and in the air atmosphere was also plotted as shown in the figures 7, 8 and 9, also from those figures we have seen clearly that the photocurrent increased with increasing bias voltage from 5V to 10V which indicating that more photoelectrons were being produced [28,29].…”
Section: Figure 6 Enlarged View Of a Single On/off Cyclementioning
confidence: 98%
“…For comparison to figure 4 and figure 5, the dynamic photoresponse measured at room temperature with the same bias voltage and in the air atmosphere was also plotted as shown in the figures 7, 8 and 9, also from those figures we have seen clearly that the photocurrent increased with increasing bias voltage from 5V to 10V which indicating that more photoelectrons were being produced [28,29].…”
Section: Figure 6 Enlarged View Of a Single On/off Cyclementioning
confidence: 98%
“…Although optical excitation of electrons from the IB to the CB is still possible, it occurs with a low probability, since most of them are thermally excited to the CB. That is the reason why quantum-dot infrared photodetectors (QDIPs) need to work at LT [55], [56], 260 K being the highest temperature at which infrared directivity has been reported in an In(Ga)As/GaAs QDIP without high bandgap blocking barriers [57]. It is therefore remarkable that the InAs/GaNAs-based IBSC prototype reported in [52] exhibits TPPC at RT.…”
Section: ) Subbandgap Spectral Response or Quantum Efficiencymentioning
confidence: 99%
“…In fact, an important advantage of the QDIP is that the device spectral response can be tuned throughout the IR spectrum (from ∼50 to 500 meV) by varying the QD heterostructure [66][67][68][69][70][71][72]. One variation of InAs/GaAs QDs involves including Ga in the InAs QD and/or Al in the GaAs barrier [6,46,73,74]. AlGaAs is advantageous as a barrier material due to its larger bandgap that helps reduce dark current.…”
Section: Alternative Qd Materials Systemsmentioning
confidence: 99%