Characteristics of InGaAs quantum dot infrared photodetectors

Xu, Shidang; Chua, Soo-Jin; Mei, Ting; Wang, X. C.; Zhang, X. H.; Karunasiri, Gamani; Fan, Wenhui; Wang, C. H.; Jiang, Jian; Wang, S.; Xie, Xiaogang

doi:10.1063/1.122703

Cited by 167 publications

(86 citation statements)

References 12 publications

(20 reference statements)

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“…For comparison to figure 4 and figure 5, the dynamic photoresponse measured at room temperature with the same bias voltage and in the air atmosphere was also plotted as shown in the figures 7, 8 and 9, also from those figures we have seen clearly that the photocurrent increased with increasing bias voltage from 5V to 10V which indicating that more photoelectrons were being produced [28,29].…”

Section: Figure 6 Enlarged View Of a Single On/off Cyclementioning

confidence: 98%

Ultrahigh responsivity UV/IR photodetectors based on pure CuO nanowires

Ate

Zhu

Quan

et al. 2014

AIP Conference Proceedings

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Section: Figure 6 Enlarged View Of a Single On/off Cyclementioning

confidence: 98%

Ultrahigh responsivity UV/IR photodetectors based on pure CuO nanowires

Ate

Zhu

Quan

et al. 2014

AIP Conference Proceedings

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“…Although optical excitation of electrons from the IB to the CB is still possible, it occurs with a low probability, since most of them are thermally excited to the CB. That is the reason why quantum-dot infrared photodetectors (QDIPs) need to work at LT [55], [56], 260 K being the highest temperature at which infrared directivity has been reported in an In(Ga)As/GaAs QDIP without high bandgap blocking barriers [57]. It is therefore remarkable that the InAs/GaNAs-based IBSC prototype reported in [52] exhibits TPPC at RT.…”

Section: ) Subbandgap Spectral Response or Quantum Efficiencymentioning

confidence: 99%

Review of Experimental Results Related to the Operation of Intermediate Band Solar Cells

Ramiro

Martı́

Antolín

et al. 2014

IEEE J. Photovoltaics

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Abstract-The intermediate band solar cell (IBSC) has drawn the attention of the scientific community as a means to achieve high-efficiency solar cells. Complete IBSC devices have been manufactured using quantum dots, highly mismatched alloys, or bulk materials with deep-level impurities. Characterization of these devices has led, among other experimental results, to the demonstration of the two operating principles of an IBSC: the production of the photocurrent from the absorption of two below bandgap energy photons and the preservation of the output voltage of the solar cell. This study offers a thorough compilation of the most relevant reported results for the variety of technologies investigated and provides the reader with an updated record of IBSC experimental achievements. A table condensing the reported experimental results is presented, which provides information at a glance about achievements, as well as pending results, for every studied technology.

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“…In fact, an important advantage of the QDIP is that the device spectral response can be tuned throughout the IR spectrum (from ∼50 to 500 meV) by varying the QD heterostructure [66][67][68][69][70][71][72]. One variation of InAs/GaAs QDs involves including Ga in the InAs QD and/or Al in the GaAs barrier [6,46,73,74]. AlGaAs is advantageous as a barrier material due to its larger bandgap that helps reduce dark current.…”

Section: Alternative Qd Materials Systemsmentioning

confidence: 99%

Quantum-dot infrared photodetectors: a review

Stiff‐Roberts

2009

J. Nanophoton

100

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Abstract. Quantum-dot infrared photodetectors (QDIPs) are positioned to become an important technology in the field of infrared (IR) detection, particularly for high-temperature, low-cost, high-yield detector arrays required for military applications. High-operating temperature (≥150 K) photodetectors reduce the cost of IR imaging systems by enabling cryogenic dewars and Stirling cooling systems to be replaced by thermo-electric coolers. QDIPs are well-suited for detecting mid-IR light at elevated temperatures, an application that could prove to be the next commercial market for quantum dots. While quantum dot epitaxial growth and intraband absorption of IR radiation are well established, quantum dot nonuniformity remains as a significant challenge. Nonetheless, state-of-the-art mid-IR detection at 150 K has been demonstrated using 70-layer InAs/GaAs QDIPs, and QDIP focal plane arrays are approaching performance comparable to HgCdTe at 77 K. By addressing critical challenges inherent to epitaxial QD material systems (e.g., controlling dopant incorporation), exploring alternative QD systems (e.g., colloidal QDs), and using bandgap engineering to reduce dark current and enhance multi-spectral detection (e.g. resonant tunneling QDIPs), the performance and applicability of QDIPs will continue to improve.Keywords: InAs/GaAs quantum dots, colloidal quantum dots, quantum-dot infrared photodetectors, QDIP focal plane arrays.

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Characteristics of InGaAs quantum dot infrared photodetectors

Cited by 167 publications

References 12 publications

Ultrahigh responsivity UV/IR photodetectors based on pure CuO nanowires

Ultrahigh responsivity UV/IR photodetectors based on pure CuO nanowires

Review of Experimental Results Related to the Operation of Intermediate Band Solar Cells

Quantum-dot infrared photodetectors: a review

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