“…The onset of NDR in BaTiS 3 is directly associated with the phase transition and the critical voltages V F and V R extracted from I‐mode are consistent with those obtained via voltage sweeps. This threshold resistive switching behavior with NDR has been previously observed in other crystalline phase‐change systems such as VO 2 [ 21–23 ] and 1T‐TaS 2 , [ 13,24,25 ] and is utilized to construct electronic devices such as oscillators. [ 13,14,22,23 ] The “S‐type” NDR behavior in those systems can be either attributed to the formation of a current path caused by the local inhomogeneities, [ 26,27 ] related to defects that pin CDW condensates, [ 28 ] or due to the coupling between CDW domains, [ 29 ] as well documented in the literature.…”