Terahertz radiation from InSb and InAS, which are typical narrow band-gap semiconductors, was investigated using time-resolved THz emission measurements. When we compared between the polarity of the THz waveforms of these narrow band-gap semiconductors with that of InP, which is a wide bandgap semiconductor, we concluded that the ultrafast buildup of the photo-Dember field is the main mechanism for the emission of THz radiation in both InAs and InSb. The emission efficiency of InSb is approximately one-hundredth of that of InAs, although the electron mobility in InSb is higher than in InAs. Wavelength-dependent measurements implied that the anomalously low THz emission efficiency of InSb might be due to a reduction in transient mobility resulting from the scattering of electrons into the low-mobility L valley.
We report on the ultrabroadband coherent detection of radiation in wavelengths spanning from far to midinfrared with a low-temperature-grown GaAs photoconductive dipole antenna gated with 15 fs light pulses. The detected spectral frequency exceeds 20 THz.
We report on the experimental realization of dielectric-metal core-shell resonators with a nearly perfect metal shell layer by physically depositing metal onto the self-supporting dielectric colloids. Sharp electric and magnetic-based cavity plasmon resonances are experimentally observed, whereas increasing the metal shell thickness increases their Q-factors while narrowing their linewidths. In particular, a high Q-factor up to ∼100 with a correspondingly narrow linewidth down to ∼12 nm is experimentally obtained at a dipolar magnetic cavity plasmon resonance. Simulations and analytical Mie calculations show excellent agreements with the experimental results and demonstrate strong optical field confinement of such three-dimensional resonators.
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