Characteristics of homoepitaxial 4H-SiC films grown on <b>
                     <i>c</i>
                  </b>-axis substrates offcut towards 〈11̄00〉 or 〈112̄0〉

Landini, B.E.; Brandes, George R.

doi:10.1063/1.123920

Cited by 23 publications

(21 citation statements)

References 12 publications

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“…The BPD densities of these two growth series are very similar, indicating that the substrate's off-cut direction has no significant impact on the epilayer's BPD density. This result agrees to those of other groups 20,21 for epigrowth on 8 off-cut substrates with different off-cut directions. Moreover, in series B and H, epigrowth was conducted at different growth temperatures of 1650 C and 1600 C, respectively, but resulting in very similar BPD densities of the epilayers.…”

Section: A Determination Of the Main Influencing Factors On The Bpd supporting

confidence: 82%

Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates

Kallinger

Polster

Berwian

et al. 2013

Journal of Applied Physics

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4H-SiC homoepitaxial layers free of basal plane dislocations (BPDs) are urgently needed to overcome the so-called bipolar degradation of high-voltage devices. BPDs being present in substrates are able to either propagate to the epilayer or convert to harmless threading edge dislocations (TEDs) in the epilayer. The model by Klapper predicts the conversion of BPDs to TEDs to be more efficient for growth on vicinal substrates with low off-cut angle. This paper aims to verify the model by Klapper by an extensive variation of epitaxial growth parameters and the substrates' off-cut. It is shown that the off-cut angle is the key parameter for growth of BPD-free epilayers. Furthermore, it is shown that the model also describes adequately the behavior of different types of TEDs, i.e., TED II and TED III dislocations, during epitaxial growth. Therefore, the model by Klapper is verified successfully for 4H-SiC homoepitaxial growth on vicinal substrates. V C 2013 AIP Publishing LLC. [http://dx

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Section: A Determination Of the Main Influencing Factors On The Bpd supporting

confidence: 82%

Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates

Kallinger

Polster

Berwian

et al. 2013

Journal of Applied Physics

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“…Because everything else is equal, these results show that the substrate affects the growth of Ti=V-Ge-C films. There is no epitaxial match by low integer number ratio between the c-axis height of (Ti,V) 3 GeC 2 and the step heights 39,40 on the 4H-SiC substrates; therefore, a direct effect of the epitaxy conditions on nucleation cannot explain this observation. The difference should rather be related to enhanced diffusion on 4H-SiC as compared to Al 2 O 3 .…”

Section: Resultsmentioning

confidence: 50%

Phase-stabilization and substrate effects on nucleation and growth of (Ti,V)n+1GeCn thin films

Kerdsongpanya

Buchholt

Tengstrand

et al. 2011

Journal of Applied Physics

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and Per Eklund, Phase-stabilization and substrate effects on nucleation and growth of (Ti,V)(n+1)GeC(n) thin films, 2011, Journal of Applied Physics, (110) Phase-pure epitaxial thin films of (Ti,V) 2 GeC have been grown onto Al 2 O 3 (0001) substrates via magnetron sputtering. The c lattice parameter is determined to be 12.59 Å , corresponding to a 50=50 Ti=V solid solution according to Vegard's law, and the overall (Ti,V):Ge:C composition is 2:1:1 as determined by elastic recoil detection analysis. The minimum temperature for the growth of (Ti,V) 2 GeC is 700 C, which is the same as for Ti 2 GeC but higher than that required for V 2 GeC (450 C). Reduced Ge content yields films containing (Ti,V) 3 GeC 2 and (Ti,V) 4 GeC 3 . These results show that the previously unknown phases V 3 GeC 2 and V 4 GeC 3 can be stabilized through alloying with Ti. For films grown on 4H-SiC(0001), (Ti,V) 3 GeC 2 was observed as the dominant phase, showing that the nucleation and growth of (Ti,V) n þ 1 GeC n is affected by the choice of substrate; the proposed underlying physical mechanism is that differences in the local substrate temperature enhance surface diffusion and facilitate the growth of the higher-order phase (Ti,V) 3 GeC 2 compared to (Ti,V) 2 GeC.

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“…Comparable rms roughnesses, with small differences in surface step uniformity, and doping results within a factor of 2 were measured for epilayers grown on the two offcuts using identical conditions. 17 Epilayers were grown in a quartz water cooled low pressure epitaxial growth system using dilute silane and dilute methane in an H 2 carrier gas. The growth pressure was 100 Torr, and the growth temperature was 1475°C or 1500°C.…”

Section: Methodsmentioning

confidence: 99%

Susceptor effects on the morphological and impurity properties of 4H-SiC epilayers

Landini

2000

Journal of Elec Materi

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The morphological and impurity properties of 4H-SiC epilayers grown using graphite susceptors coated with vitreous carbon, SiC, TaC, and NbC were compared. Metal carbide coated susceptors produced epilayers with smooth morphologies and no thick backside polycrystalline SiC deposition. Epilayers grown using metal carbide coated susceptors possessed more than 10 times higher intentional N 2 doping efficiencies and more than 10 times lower unintentional Al concentrations compared to epilayers grown using vitreous carbon coated susceptors. Metal carbide coated susceptors permitted doping control and abrupt p.n. junctions, and possessed more than 10 times longer lifetimes compared with vitreous carbon or SiC coated susceptors.

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Characteristics of homoepitaxial 4H-SiC films grown on c -axis substrates offcut towards 〈11̄00〉 or 〈112̄0〉

Cited by 23 publications

References 12 publications

Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates

Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates

Phase-stabilization and substrate effects on nucleation and growth of (Ti,V)n+1GeCn thin films

Susceptor effects on the morphological and impurity properties of 4H-SiC epilayers

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