2002
DOI: 10.1016/s0022-0248(01)01752-3
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Characteristics of hetero-interfaces between MnAs films and Mn–Zn ferrite

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Cited by 4 publications
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“…In the case of growths of GaAs on the ferrite substrates, however, their crystalline qualities are rather poor because of larger lattice mismatch and special techniques such as insertion of a buffer layer are highly requested. Recently, we have found that high-quality manganese pnictide films can be grown epitaxially on MnZn ferrite [10][11][12][13]. Among manganese pnictides, MnAs is a promising candidate as a buffer layer for GaAs on MnZn ferrite because it shares the common elements (As and Mn) with GaAs and MnZn ferrite, respectively.…”
Section: Introductionmentioning
confidence: 99%
“…In the case of growths of GaAs on the ferrite substrates, however, their crystalline qualities are rather poor because of larger lattice mismatch and special techniques such as insertion of a buffer layer are highly requested. Recently, we have found that high-quality manganese pnictide films can be grown epitaxially on MnZn ferrite [10][11][12][13]. Among manganese pnictides, MnAs is a promising candidate as a buffer layer for GaAs on MnZn ferrite because it shares the common elements (As and Mn) with GaAs and MnZn ferrite, respectively.…”
Section: Introductionmentioning
confidence: 99%