Growth temperature dependence of structural properties for AlN films grown on (Mn,Zn)Fe2O4 substrates

Growth of a‐plane AlN on r‐plane sapphire by plasma source molecular beam epitaxy

“…Spotty diffraction patterns appear on the RHEED screen after the growth of more than 10 monolayers of thick AlN which shows the evidence of a three-dimensional growth. This transition in the growth mode suggests that the strain built up from the lattice mismatch between AlN and the substrate is relaxed by the morphological change at this stage [6]. A further increase in the AlN thickness does not change the growth mode as shown in Fig.…”

Growth and structural properties of rocksalt MnSe/GaAs epilayer by hot-wall epitaxy

“…The magnitude of the thermal strain cannot be evaluated, because the thermal expansion coefficient of a-MnSe is unknown at present. In addition, the strain relaxation caused by the gliding of the stacking faults and the formation of the misfit dislocations has been reported in the sample grown/annealed at high temperature [12][13][14]. To investigate the effects of thermal processing for the a-MnSe epilayers, some asgrown samples were annealed at high temperature (660-800 1C) in a nitrogen atmosphere for 300 s in a rapid thermal annealing system.…”

GaN thin films on z‐ and x ‐cut LiNbO3 substrates by MOVPE

“…LiNbO 3 has a rhombohedral 3m crystal structure with lattice parameters a = 0.5147 nm and c = 1.3862 nm, while GaN has wurtzite structure with This corresponds to the in-plane lattice mismatch of 6.8% between LiNbO 3 and GaN (a = 0.3189 nm, c = 0.5185 nm) with a 30° rotation of the LiNbO 3 [3]. Although the lattice mismatch between GaN (00.1) and LiNbO 3 (00.1) is reduced compared to that in the GaN-on-sapphire (~16%), growth is usually performed using transitional and/or nucleation layers, such as AlN, to accommodate strain and to improve the quality of the grown GaN material [4][5][6][7].…”