2020
DOI: 10.1016/j.carbon.2019.12.093
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Characteristics of graphene grown through low power capacitive coupled radio frequency plasma enhanced chemical vapor deposition

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Cited by 21 publications
(14 citation statements)
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“…The placement of the copper foil for graphene growth. Plasma can effectively promote the decomposition of hydrocarbon precursor, and a mass of plasma-generated ions and radicals, such as Ar ions, cause drastic bombardment 26 . In addition, high densities of H atoms and other free radicals cause excessive etching of graphene 34,40 .…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The placement of the copper foil for graphene growth. Plasma can effectively promote the decomposition of hydrocarbon precursor, and a mass of plasma-generated ions and radicals, such as Ar ions, cause drastic bombardment 26 . In addition, high densities of H atoms and other free radicals cause excessive etching of graphene 34,40 .…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, PECVD shows considerable potential for low-temperature graphene preparation. Researchers have achieved the low-temperature growth of graphene thin films by PECVD on transition metal substrates such as nickel [22][23][24] , copper (Cu) [25][26][27] , and cobalt 28 , dielectric substrates [29][30][31] , and other 2-dimensional materials 32 .…”
Section: Nucleation and Growth Dynamics Of Graphene Grown By Radio Frmentioning
confidence: 99%
“…To further obtain the microscopic structural information of the samples, Raman analysis is carried out, as presented in Figure c. As can be clearly seen, CVDG and RGO both show a characteristic D band at around 1350 cm –1 and G band at around 1580 cm –1 , which are attributed to the sp 3 defect and graphitic sp 2 carbons, respectively. , Since the intensity ratio of the D and G bands ( I D / I G ) is an important parameter for measuring the relative concentration of local defects or disorders in graphene nanosheets, the remarkably lower I D / I G value of CVDG (0.40) than that of RGO (0.97) indicates a high graphitization degree. In other words, CVDG possesses markedly lower defect density than RGO .…”
Section: Results and Discussionmentioning
confidence: 99%
“…Yen et al successfully prepared a single layer of graphene film of full-coverage over the substrate in less than 30 s using the CCP system [112]. The vacancy defects, which might be caused by the synthesis process of the graphene growth, was examined to adsorb gases, and it was found that the vacancy defects could promote changes of charge transfer in the graphene film with a response of about 6% under 100 ppb of NO 2 [113]. electric field in the vicinity of the substrate surface, especially on the top side of a textured silicon wafer of a pyramid nature, which leads to electric field enhancement and graphene deposition.…”
Section: Radio Frequencymentioning
confidence: 99%