Nucleation and growth dynamics of graphene grown by radio frequency plasma-enhanced chemical vapor deposition

Li, Na; Zhen, Zhen; Zhang, Rujing; Xu, Zhenhua; Zheng, Zhen; He, Limin

doi:10.1038/s41598-021-85537-3

Cited by 26 publications

(15 citation statements)

References 42 publications

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“…Translating these performance enhancements to functional substrates at the wafer scale will require directly grown graphene synthesis approaches on the substrate of interest. For example, CVD approaches using small molecules, activated precursors, or plasma-enhanced CVD processes − show promise for reducing the graphene synthesis temperature and may be a route for graphene growth directly on GaAs and other technologically important compound semiconductors.…”

Section: Discussionmentioning

confidence: 99%

Quantifying Mn Diffusion through Transferred versus Directly Grown Graphene Barriers

Strohbeen

Manzo

Saraswat

et al. 2021

ACS Appl. Mater. Interfaces

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We quantify the mechanisms for manganese (Mn) diffusion through graphene in Mn/graphene/Ge (001) and Mn/graphene/GaAs (001) heterostructures for samples prepared by graphene layer transfer versus graphene growth directly on the semiconductor substrate. These heterostructures are important for applications in spintronics; however, challenges in synthesizing graphene directly on technologically important substrates such as GaAs necessitate layer transfer and annealing steps, which introduce defects into the graphene. In situ photoemission spectroscopy measurements reveal that Mn diffusion through graphene grown directly on a Ge (001) substrate is 1000 times lower than Mn diffusion into samples without graphene (D gr,direct ∼ 4 × 10 −18 cm 2 /s, D no-gr ∼ 5 × 10 −15 cm 2 /s at 500 °C). Transferred graphene on Ge suppresses the Mn in Ge diffusion by a factor of 10 compared to no graphene (D gr,transfer ∼ 4 × 10 −16 cm 2 /s). For both transferred and directly grown graphene, the low activation energy (E a ∼ 0.1−0.5 eV) suggests that Mn diffusion through graphene occurs primarily at graphene defects. This is further confirmed as the diffusivity prefactor, D 0 , scales with the defect density of the graphene sheet. Similar diffusion barrier performance is found on GaAs substrates; however, it is not currently possible to grow graphene directly on GaAs. Our results highlight the importance of developing graphene growth directly on functional substrates to avoid the damage induced by layer transfer and annealing.

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Section: Discussionmentioning

confidence: 99%

Quantifying Mn Diffusion through Transferred versus Directly Grown Graphene Barriers

Strohbeen

Manzo

Saraswat

et al. 2021

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…Translating these performance enhancements to functional substrates at wafer scale will require direct graphene synthesis approaches on the substrate of interest. For example, CVD approaches using small molecules [23], activated precursors [24], or plasmaenhanced CVD processes [25][26][27] show promise for reducing the graphene synthesis temperature, and may be a route for graphene growth directly on GaAs and other technologically important compound semiconductors.…”

Section: Discussionmentioning

confidence: 99%

Quantifying Mn diffusion through transferred versus directly-grown graphene barriers

Strohbeen,

Manzo,

Saraswat

et al. 2021

Preprint

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We quantify the mechanisms for manganese (Mn) diffusion through graphene in Mn/graphene/Ge (001) and Mn/graphene/GaAs (001) heterostructures, for samples prepared by graphene layer transfer versus graphene growth directly on the semiconductor substrate. These heterostructures are important for applications in spintronics; however, challenges in synthesizing graphene directly on technologically important substrates such as GaAs necessitate layer transfer steps, which can introduce defects into the graphene. In-situ photoemission spectroscopy measurements reveal that Mn diffusion through graphene grown directly on a Ge (001) substrate is 1000 times lower than Mn diffusion into samples without graphene (D gr,direct ∼ 4 × 10 −18 cm 2 /s, Dno−gr ∼ 5 × 10 −15 cm 2 /s at 500 • C). Transferred graphene on Ge suppresses the Mn in Ge diffusion by a factor of 10 compared to no graphene (D gr,transf er ∼ 4 × 10 −16 cm 2 /s). For both transferred and directly-grown graphene, the low activation energy (Ea ∼ 0.1 − 0.5 eV) suggests that Mn diffusion through graphene occurs primarily at graphene defects. The diffusivity prefactor D0 scales with the defect density. Similar diffusion barrier performance is found on GaAs substrates; however, it is not currently possible to grow graphene directly on GaAs. Our results highlight the importance of developing graphene growth directly on functional substrates, to avoid the damage induced by layer transfer.

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“…At a deposition temperature of 400 °C and postdeposition annealing up to 800 °C under Ar flow, crystal growth and graphitization are obtained on Cu and Ni foils and interestingly on NaCl. Recently, the growth of Gr grains on Cu substrate using the radio frequency PECVD (RF-PECVD) at different temperatures has been reported [43]. ese authors demonstrated the fabrication of large polycrystalline Gr grains at high temperatures and a relatively long dwell time.…”

Section: Chemical Vapor Deposition Chemical Vapor Depositionmentioning

confidence: 99%

Graphene and g-C3N4-Based Gas Sensors

Kotbi

Imran

Kaja

et al. 2022

Journal of Nanotechnology

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The efficient monitoring of the environment is currently gaining a continuous growing interest in view of finding solutions for the global pollution issues and their associated climate change. In this sense, two-dimensional (2D) materials appear as one of highly attractive routes for the development of efficient sensing devices due, in particular, to the interesting blend of their superlative properties. For instance, graphene (Gr) and graphitic carbon nitride g-C3N4 (g-CN) have specifically attracted great attention in several domains of sensing applications owing to their excellent electronic and physical-chemical properties. Despite the high potential they offer in the development and fabrication of high-performance gas-sensing devices, an exhaustive comparison between Gr and g-CN is not well established yet regarding their electronic properties and their sensing performances such as sensitivity and selectivity. Hence, this work aims at providing a state-of-the-art overview of the latest experimental advances in the fabrication, characterization, development, and implementation of these 2D materials in gas-sensing applications. Then, the reported results are compared to our numerical simulations using density functional theory carried out on the interactions of Gr and g-CN with some selected hazardous gases’ molecules such as NO2, CO2, and HF. Our findings conform with the superior performances of the g-CN regarding HF detection, while both g-CN and Gr show comparable detection performances for the remaining considered gases. This allows suggesting an outlook regarding the future use of these 2D materials as high-performance gas sensors.

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Nucleation and growth dynamics of graphene grown by radio frequency plasma-enhanced chemical vapor deposition

Cited by 26 publications

References 42 publications

Quantifying Mn Diffusion through Transferred versus Directly Grown Graphene Barriers

Quantifying Mn Diffusion through Transferred versus Directly Grown Graphene Barriers

Quantifying Mn diffusion through transferred versus directly-grown graphene barriers

Graphene and g-C3N4-Based Gas Sensors

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